Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

Abstract

Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).

Synthesis of Sb2S3 nanosphere layer by chemical bath deposition for the photocatalytic degradation of methylene blue dye

“…The estimated value of E g for the Sb 2 S 3 layer was 2.53 eV, which agrees with the reported values. 27,52 A similar range of the E g value would qualify the benefit of this material in the solar photocatalytic applications. 42…”

“…The amorphous Sb 2 S 3 phase has a direct energy gap ( E g ) in the range of 1.7–2.8 eV, while the E g for the crystalline phase ranges between 1.7 and 1.8 eV. 27 In terms of application, the photocatalytic performance of antimony compounds in the degradation of organic pollutants is still less efficient compared to other photocatalysts based on noble metals and phosphides. 3,28 In this regard, limited work has been devoted to using Sb 2 S 3 as a photocatalytic material in the degradation of organic dyes.…”

Self-Powered Sb2S3 Thin-Film Photodetectors with High Detectivity for Weak Light Signal Detection

“…Then, the R and D * values have been calculated under different light power intensities as shown in Figure c,d, respectively. Clearly, according to the varying tendencies in these curves, the lower the power intensity is, the higher R and D * will be obtained . With a light power intensity of 1 μW cm –2 , an R value of 3 A W –1 and a D * value of 2.5 × 10 13 Jones are obtained for the PD, indicating an excellent weak light detection effect.…”

Solution-Processed Sb2S3-Based Heterojunction for Self-Powered Broad Band Weak Light Detection

“…The stability and reproducibility of the I – t graph for up to five cycles are presented in Figure S5. Quantitatively, the relationship between the photocurrent and the light intensity can be fitted by a simple power law where I ph is the photocurrent measured, P is the optical power intensity, and β represents the defect density. The photocurrent is directly proportional to incident light intensity when the defect density is very low; hence, β should be close to 1.…”