Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers

Abstract

We report on the design, fabrication, and characterization of heterostructure In-Zn-O (IZO) thin-film transistors (TFTs) with improved performance characteristics and robust operation. The heterostructure layer is fabricated by stacking a solution-processed IZO film on top of a buffer layer, which is deposited previously using an electron beam (e-beam) evaporator. A thin buffer layer at the dielectric interface can help to template the structure of the channel. The control of the precursors and of the solvent used during the sol–gel process can help lower the temperature needed for the sol–gel condensation reaction to proceed cleanly. This boosts the overall performance of the device with a significantly reduced subthreshold swing, a four-fold mobility increase, and a two-order of magnitude larger on/off ratio. Atomistic simulations of the a-IZO structure using molecular dynamics (both classical and ab initio ) and hybrid density functional theory (DFT) calculations of the electronic structure reveal the potential atomic origin of these effects.

Comprehensive review of micro/nanostructured ZnSnO3: characteristics, synthesis, and diverse applications

“…Concurrently, the recrystallization of ZnSn(OH) 6 occurs in the system, maintaining dynamic-equilibrium. 70 ZnSn(OH) 6 + 4OH − 4 Sn(OH) 6 2− + Zn(OH) 4…”

“…Accordingly, to overcome this limitation and improve their characteristics, researchers are actively engaged in the development of ternary oxides, such as ZnSnO 3 and In-Zn-O. [5][6][7] Among them, nanostructures of ZnSnO 3 (various nano shapes, such as wires, rods, rings, tubes, cubes, and spheres) have attracted considerable interest owing to their advantageous chemical sensitivity, wide energy bandgap, high transmittance percentage, electron mobility, low price, non-toxicity, and earth abundance. 5,[8][9][10][11][12][13] The performance of energy storage devices and catalysis is greatly affected by the morphology, structure, and physical characteristics of the active electrode materials.…”