2020
DOI: 10.1021/acsami.9b22586
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Robust Sample Preparation of Large-Area In- and Out-of-Plane Cross Sections of Layered Materials with Ultramicrotomy

Abstract: Layered materials (LMs) such as graphene or MoS2 have recently attracted a great deal of interest. These materials offer unique functionalities due to their structural anisotropy characterized by weak van der Waals bonds along the out-of-plane axis and covalent bonds in the in-plane direction. A central requirement to access the structural information of complex nanostructures built upon LMs is to control the relative orientation of each sample prior to their inspection e.g. with Transmission Electron Microsco… Show more

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Cited by 9 publications
(9 citation statements)
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“…We obtained the values of 0.39, 0.28, 0.29, 0.31, and 0.20 in the temperature range investigated (from 800 to 1000 every 50°), which are in good agreement with the ratio of around 0.3 reported in previous works for VA MoS 2 layers. ,,, , These values are to be compared with an intensity ratio E 1 2g /A 1g of 0.8 obtained for a MoS 2 monocrystal (Figure S2) where MoS 2 layers of large area are horizontally stacked. Figure c also shows the E 1g mode at 288 cm –1 (in-plane vibration).…”
Section: Results and Discussionsupporting
confidence: 89%
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“…We obtained the values of 0.39, 0.28, 0.29, 0.31, and 0.20 in the temperature range investigated (from 800 to 1000 every 50°), which are in good agreement with the ratio of around 0.3 reported in previous works for VA MoS 2 layers. ,,, , These values are to be compared with an intensity ratio E 1 2g /A 1g of 0.8 obtained for a MoS 2 monocrystal (Figure S2) where MoS 2 layers of large area are horizontally stacked. Figure c also shows the E 1g mode at 288 cm –1 (in-plane vibration).…”
Section: Results and Discussionsupporting
confidence: 89%
“…The sulfurization of molybdenum films , is a simple and straightforward technique to grow VA-MoS 2 with a controlled thickness as it depends on the amount of the predeposited Mo-metal seed layer. VA-MoS 2 is obtained for Mo films thicker than around 3 nm at high temperatures and sulfur fluxes. ,,, The growth with a preferred vertical orientation is attributed to kinetic considerations. The diffusion of sulfur toward the metal is expected to be faster when it occurs through the van der Waals interlayer gaps of vertical layers. , …”
Section: Introductionmentioning
confidence: 99%
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“…These nanostructures were directly grown onto a microchip made of silicon as a frame with a silicon nitride (Si3N4) window in the middle (see Fig. 1b) 20,21 .…”
Section: Synthesis and Morphologymentioning
confidence: 99%
“…For the nonlinear optical measurements, the specimen was prepared by means of the ultramicrotomy technique. 34 See ESI-E † for more details. The specimen was illuminated with two synchronized laser pulses at λ 1 = 776 nm and λ 2 = 1210 nm that were temporally and spatially overlapped.…”
Section: Characterization Techniquesmentioning
confidence: 99%