Robust skyrmion-bubble textures in 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>Sr</mml:mi><mml:mi>Ru</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>
 thin films stabilized by magnetic anisotropy

Zhang, Ping; Das, Arijit; Barts, Evgenii; Azhar, Maria; Si, Liang; Held, Karsten; Mostovoy, Maxim; Banerjee, T.

doi:10.1103/physrevresearch.2.032026

Cited by 23 publications

(10 citation statements)

References 41 publications

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“…The films were deposited at 600°C with an oxygen pressure of 0.13 mbar. After 1,200 laser pulses, we cooled the films down to room temperature under an oxygen pressure of 100 mbar (Zhang et al, 2020). Throughout this paper, we will refer to the SRO/ STO (001) samples as SRO 001 and to the SRO/STO (110) samples as SRO 110 .…”

Section: Methodsmentioning

confidence: 99%

Anisotropy and Current Control of Magnetization in SrRuO3/SrTiO3 Heterostructures for Spin-Memristors

Goossens

Leiviskä

Banerjee

2021

Front. Nanotechnol.

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Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context. Complex oxide heterostructures with perpendicular magnetic anisotropy (PMA), consisting of SrRuO3 (SRO) grown on SrTiO3 (STO) are strong material contenders. Utilizing the crystal orientation, magnetic anisotropy in such simple heterostructures can be tuned to either exhibit a perfect or slightly tilted PMA. Here, we investigate current induced magnetization modulation in such tailored ferromagnetic layers with a material with strong spin-orbit coupling (Pt), exploiting the spin Hall effect. We find significant differences in the magnetic anisotropy between the SRO/STO heterostructures, as manifested in the first and second harmonic magnetoresistance measurements. Current-induced magnetization switching can be realized with spin-orbit torques, but for systems with perfect PMA this switching is probabilistic as a result of the high symmetry. Slight tilting of the PMA can break this symmetry and allow the realization of deterministic switching. Control over the magnetic anisotropy of our heterostructures therefore provides control over the manner of switching. Based on our findings, we propose a three-terminal spintronic memristor, with a magnetic tunnel junction design, that shows several resistive states controlled by electric charge. Non-volatile states can be written through SOT by applying an in-plane current, and read out as a tunnel current by applying a small out-of-plane current. Depending on the anisotropy of the SRO layer, the writing mechanism is either deterministic or probabilistic allowing for different functionalities to emerge. We envisage that the probabilistic MTJs could be used as synapses while the deterministic devices can emulate neurons.

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Section: Methodsmentioning

confidence: 99%

Anisotropy and Current Control of Magnetization in SrRuO3/SrTiO3 Heterostructures for Spin-Memristors

Goossens

Leiviskä

Banerjee

2021

Front. Nanotechnol.

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show abstract

“…The films were deposited at 600 • C with an oxygen pressure of 0.13 mbar. After 1200 laser pulses, we cooled the films down to room temperature under an oxygen pressure of 100 mbar [32]. Throughout this paper, we will refer to the SRO/STO (001) samples as SRO 001 and to the SRO/STO (110) samples as SRO 110 .…”

Section: Methodsmentioning

confidence: 99%

Anisotropy and Current Control of Magnetization in SrRuO3 SrTiO3 Heterostructures for Spin-Memristors

Goossens¹,

Leiviskä²,

Banerjee³

2021

Preprint

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Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context. Complex oxide heterostructures with perpendicular magnetic anisotropy (PMA), consisting of SrRuO 3 (SRO) grown on SrTiO 3 (STO) are strong material contenders. Utilizing the crystal orientation, magnetic anisotropy in such simple heterostructures can be tuned to either exhibit a perfect or slightly tilted PMA. Here, we investigate current induced magnetization modulation in such tailored ferromagnetic layers with a material with strong spin-orbit coupling (Pt), exploiting the spin Hall effect. We find significant differences in the magnetic anisotropy between the SRO/STO heterostructures, as manifested in the first and second harmonic magnetoresistance measurements. Current-induced magnetization switching can be realized with spin-orbit torques, but for systems with perfect PMA this switching is probabilistic as a result of the high symmetry. Slight tilting of the PMA can break this symmetry and allow the realization of deterministic switching. Control over the magnetic anisotropy of our heterostructures therefore provides control over the manner of switching. Based on our findings, we propose a three-terminal spintronic memristor, with a magnetic tunnel junction design, that shows several resistive states controlled by electric charge. Non-volatile states can be written through SOT by applying an in-plane current, and read out as a tunnel current by applying a small out-of-plane current. Depending on the anisotropy of the SRO layer, the writing mechanism is either deterministic or probabilistic allowing for different functionalities to emerge. We envisage that the probabilistic MTJs could be used as synapses while the deterministic devices can emulate neurons.

show abstract

“…This structure could be a hint for a non-trivial spin structure different to Néel-type skyrmions (e.g. magnetic bimerons [54,55] or magnetic bubbles [56]).…”

Section: Field-angle Dependent Hall Effect and Magnetoresistancementioning

confidence: 97%

Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures

Esser,

Wu,

Esser

et al. 2021

Preprint

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Robust skyrmion-bubble textures in SrRuO3 thin films stabilized by magnetic anisotropy

Cited by 23 publications

References 41 publications

Anisotropy and Current Control of Magnetization in SrRuO3/SrTiO3 Heterostructures for Spin-Memristors

Anisotropy and Current Control of Magnetization in SrRuO3/SrTiO3 Heterostructures for Spin-Memristors

Anisotropy and Current Control of Magnetization in SrRuO3 SrTiO3 Heterostructures for Spin-Memristors

Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures

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