Robust ultra-thin RuMo alloy film as a seedless Cu diffusion barrier

Hsu, Kuo Chung; Perng, Dung Ching; Wang, Yi Chun

doi:10.1016/j.jallcom.2011.11.144

Cited by 21 publications

(10 citation statements)

References 30 publications

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“…70-0274). 20 As observed, these weak XRD signals also conrmed that metal particles are ultrasmall. X-ray photoelectron spectroscopy (XPS) data were also recorded to acquire surface chemistry-related information on Ru catalysts (Fig.…”

Section: Catalyst Preparation and Characterizationmentioning

confidence: 73%

Mo-modified electronic effect on sub-2 nm Ru catalyst for enhancing hydrogen oxidation catalysis

Chen

Zhang

et al. 2023

J. Mater. Chem. A

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Section: Catalyst Preparation and Characterizationmentioning

confidence: 73%

Mo-modified electronic effect on sub-2 nm Ru catalyst for enhancing hydrogen oxidation catalysis

Chen

Zhang

et al. 2023

J. Mater. Chem. A

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“…Due to the difficulty in achieving uniform depositions of ultra-thin barrier layers, more attention has been paid to self-formed diffusion barriers (barrierless metallization) in recent years [13][14][15]. The self-formed barrier layer offers low electrical resistivity, resistance to Cu diffusion, resistance to electromigration and compatibility with conformal deposition techniques [16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization

et al. 2022

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The barrier properties and diffusion behavior of Cu(Re) alloy films were studied. The films were deposited onto barrierless SiO2/Si by magnetron sputtering. X-ray diffraction patterns and electric resistivity results proved that the Cu(Re) alloy films without a barrier layer were thermally stable up to 550 °C. Transmission electron microscopy images and energy-dispersive spectrometry employing scanning transmission electron microscopy provided evidence for a self-formed Re-enriched diffusion layer between the Cu(Re) alloy and SiO2/Si substrate. Furthermore, the chemical states of Re atoms at the Cu(Re)/SiO2 interface were analyzed by X-ray photoemission spectroscopy. The self-formed diffusion layer was found to be composed of Re metal, ReO and ReO3. At 650 °C, the Cu(Re) layer was completely destroyed due to atom diffusion. The low electrical resistivity in combination with the high thermal stability suggests that the Cu(Re) alloy could be the ultimate Cu interconnect diffusion barrier.

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“…[20][21][22] This ''barrierless structure'' not only prevents diffusion of Cu into the Si substrate but also maintains a low resistivity for the overall interconnection structure. 1,[23][24][25] In recent years, self-formed barrier layers have been widely studied due to their excellent performance. 26 Usually, Cu and a small amount of (Received December 4, 2019; accepted July 16, 2020; published online July 29, 2020) insoluble alloy elements (M) are deposited on silicon wafers, thus obtaining a layer of Cu metallization without a barrier layer.…”

Section: Introductionmentioning

confidence: 99%

Effect of Different Ni Contents on Thermal Stability of Cu(Ni) Alloy Film

Cheng

Asempah

et al. 2020

Journal of Elec Materi

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The effect of doping different contents of Ni on the thermal stability of Cu(Ni) alloy films has been investigated. Cu(Ni) films with different Ni contents were deposited on SiO 2 /Si substrates by magnetron sputtering, then annealed in vacuum at 350°C to 650°C for 0.5 h. X-ray diffraction analysis and resistance measurements revealed that high-resistance copper silicide was formed after annealing at 450°C for the Cu(Ni, 1.66 at.%) and Cu(Ni, 9.16 at.%) samples. However, no copper silicide was observed for Cu(Ni, 3.59 at.%) even after annealing at 650°C. Transmission electron microscopy provided evidence for a $ 25-nm self-formed barrier layer at the Cu/SiO 2 interface with Cu(Ni, 3.59 at.%). The failure to form a diffusion barrier for the Cu(Ni, 1.66 at.%) sample resulted from its low Ni doping concentration, which was insufficient to produce such a self-formed layer during annealing. The barrier failure was caused by grain refinement due to the increased Ni content, providing diffusion channels for atom diffusion. The results clearly suggest that addition of an appropriate amount of Ni can improve the thermal stability of Cu(Ni)/SiO 2 / Si interconnect structure materials.

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Robust ultra-thin RuMo alloy film as a seedless Cu diffusion barrier

Cited by 21 publications

References 30 publications

Mo-modified electronic effect on sub-2 nm Ru catalyst for enhancing hydrogen oxidation catalysis

Mo-modified electronic effect on sub-2 nm Ru catalyst for enhancing hydrogen oxidation catalysis

Self-Formed Diffusion Layer in Cu(Re) Alloy Film for Barrierless Copper Metallization

Effect of Different Ni Contents on Thermal Stability of Cu(Ni) Alloy Film

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