Robust ultrathin and transparent AZO/Ag-SnO /AZO on polyimide substrate for flexible thin film heater with temperature over 400 °C

Wang, Zhaozhao; Li, Jia; Xu, Junjun; Huang, Jinhua; Yang, Ye; Tan, Ruiqin; Chen, Guofei; Fang, Xingzhong; Zhao, Yue; Song, Weijie

doi:10.1016/j.jmst.2020.01.058

Cited by 30 publications

(9 citation statements)

References 37 publications

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“…However, gold is an expensive material, and copper is easily oxidized in the atmosphere. Therefore, among these materials, silver thin films are appropriate for electrodes in optoelectronics and are widely used. , The properties of Ag thin films generally depend on thickness . Increasing the film thickness induces a rougher surface structure than that of thinner films, and rough surfaces cause optical loss from the scattering of light.…”

Section: Introductionmentioning

confidence: 99%

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Park

et al. 2022

ACS Appl. Mater. Interfaces

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Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/Ag 2 O layer is continuously deposited on a β-Ga 2 O 3 epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p−n junction photodetector was constructed through the Ag 2 O/β-Ga 2 O 3 heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time. The effect of top electrode thickness on the photoresponse characteristics of photodetectors was studied. Because thin Ag films have low surface roughness, indicating low optical loss and good interfacial conditions, photodetectors using a thin Ag film as the top electrode exhibit high photoresponsivity. However, Ag films that were thinner than the threshold thickness, which is the minimum thickness required to form a continuous, homogeneous surface film, exhibited rather low performance owing to the high reflection and scattering caused by the inhomogeneous surface morphology. The as-fabricated photodetector with a 20 nm Ag film presents a high on/off ratio of 3.43 × 10 8 , responsivity and detectivity of 25.65 mA/W and 6.10 × 10 11 Jones, respectively, and comparable rise and decay times of 108 and 80 ms, respectively. Additionally, even after three months of storage in an ambient environment, the photoresponse of the photodetector was maintained, indicating good stability in air. These results suggest that Ag 2 O/β-Ga 2 O 3 heterojunction-based photodetectors with thin Ag films can be used in various applications requiring deep-ultraviolet detection without an external power supply. KEYWORDS: deep ultraviolet (DUV), photodetector, self-powered, Ag film thickness, Ag 2 O/β-Ga 2 O 3 , p−n junction

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Section: Introductionmentioning

confidence: 99%

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Park

et al. 2022

ACS Appl. Mater. Interfaces

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“…Another way to obtain transparent PIs is to manufacture composite PIs with inorganic materials. Hybrid components include organo-clay [ 28 ], metal and metallic oxides [ 29 , 30 ], boron nitride [ 31 ], carbon nanomaterials [ 32 , 33 , 34 ], nucleating agents [ 35 ], and organosilicates [ 36 ]. However, it remains a great challenge to manage the trade-off between high solubility/optical properties and other desirable properties.…”

Section: Introductionmentioning

confidence: 99%

High-Transparency and Colorless Polyimide Film Prepared by Inhibiting the Formation of Chromophores

Liu

Yue

et al. 2022

Polymers

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Colorless polyimides (CPIs) with outstanding mechanical properties are essential materials in the production of flexible display panels, foldable windows, and even spacecraft cockpits. This paper specifically elaborates that the Morkit unit, and azo and nitro chromophores are important factors contributing to yellow PI, together with the well-known charge transfer complex (CTC) theory. Three diamine monomers, two anhydrides monomers, and three blockers were used to inhibit chromophores formation and, thus, obtain CPI films. The cut-off wavelength was blue-shifts to 334 nm and the transmittance is improved to 98.9% in the UV–vis range. Mechanical and thermal properties of the CPI films are not reduced through coupling effects of the blockers. Therefore, the inhibition method of the Morkit units and chromophore groups is a promising process for preparing CPIs to be used as flexible display materials.

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“…Gold film is an expensive metal material, while copper film has the problem of easy oxidation in the atmosphere, which seriously deteriorates its electrical conductivity and light transmittance in the visible light range. Due to the unique electrical and optical properties in the visible region, oxide/metal/oxide (OMO) compound thin films based on ultrathin metal Ag films have attracted much attention. − Metal film growth on a substrate generally follows several stages in a sequence, namely, nucleation, coalescence, and thickness growth. Owing to the poor adhesion with the substrate, the growth of the metal film presents a Volmer–Weber mode [island growth: isolated three-dimensional (3D) metallic islands form on the substrate], which results in high threshold thickness (∼10–15 nm) to yield a continuous thin film .…”

Section: Introductionmentioning

confidence: 99%

Broad-Spectrum Ultrathin-Metal-Based Oxide/Metal/Oxide Transparent Conductive Films for Optoelectronic Devices

Liu

Zou

et al. 2021

ACS Appl. Mater. Interfaces

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High-quality transparent conductive materials are beneficial to improve the charge transfer and light transmittance and reduce the interface defects as well as the production cost of optoelectronic devices. A high threshold thickness of metal layer in oxide/metal/oxide (OMO) compound thin films leads to strong reflectance, especially in the near-infrared region, limiting the broad-spectrum device applications. Here, we propose a novel Zn doping strategy using the low-cost single-target sputtering technology to achieve the growth of Ag−Zn thin films (i.e., Zn-doped Ag) and introduce a trace amount of O 2 to further obtain ultrathin Ag−Zn(O) films (thin-film thickness d ≤ 5 nm), which greatly improves the broad-spectrum characteristics of OMO films. Heterogeneous metal and gas doping technology effectively promotes the formation of two-dimensional continuous film growth. By combining the ultrathin Ag−Zn(O) layer with the MGZO (i.e., Mg-and Ga co-doped ZnO) oxide film grown by reactive plasma deposition, a typical broad-spectrum MGZO/Ag−Zn(O)/MGZO (50/5/50 nm)-OMO compound thin film exhibits an average transmittance of 91.6% in the wavelength range of 400−1200 nm and low sheet resistance. The broad-spectrum organic solar cells based on MGZO/Ag−Zn(O)/MGZO electrodes present a high power conversion efficiency of 15.35%, superior to those devices based on single-layer oxide electrodes. The distinguished performances are attributed to the ultrathin Ag−Zn(O) films in OMO, paving the way for applications in broad-spectrum optoelectronic and flexible electronic devices.

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Robust ultrathin and transparent AZO/Ag-SnO /AZO on polyimide substrate for flexible thin film heater with temperature over 400 °C

Cited by 30 publications

References 37 publications

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

High-Transparency and Colorless Polyimide Film Prepared by Inhibiting the Formation of Chromophores

Broad-Spectrum Ultrathin-Metal-Based Oxide/Metal/Oxide Transparent Conductive Films for Optoelectronic Devices

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Robust ultrathin and transparent AZO/Ag-SnO /AZO on polyimide substrate for flexible thin film heater with temperature over 400 °C

Cited by 30 publications

References 37 publications

Ag2O/β-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Ag2O/β-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

High-Transparency and Colorless Polyimide Film Prepared by Inhibiting the Formation of Chromophores

Broad-Spectrum Ultrathin-Metal-Based Oxide/Metal/Oxide Transparent Conductive Films for Optoelectronic Devices

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Product

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Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability