Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility

Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

“…PureB p + n photodiode detectors have become well established as the devices of choice for detection of low-penetration-depth beams such as vacuum-ultraviolet light (VUV) [13] and low-energy electrons [14] because the photosensitive region can be created in the top few nanometer of the silicon. The fact that the PureB process is highly compatible with CMOS processing has been very important for the realization of high-performance detectors [15] and the present work is also a good example of how integration flexibility is promoted by the chemical and electrical robustness of the PureB layer junction. As one of the test structures, PureB diodes were fabricated on textured surfaces for the first time.…”

Conductance Along the Interface Formed by 400 °C Pure Boron Deposition on Silicon

“…These junctions have found application as photodiodes for the detection of vacuum ultraviolet (VUV) light [1] and low energy electrons [2] where the latter application makes use of the fact that a couple of nanometers of the PureB layer itself can form both the anode and a chemically and electrically robust front-entrance window. Recently, similar qualities were also demonstrated for a PureB deposition temperature of 400°C [3].…”

UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode

“…With an in situ drive-in step, adjusted to the targeted light wavelengths and specific application, the junction depth can be increased and the sheet resistance be lowered. For anneal temperatures of up to 900°C giving an increase of junction depth around 100 nm, it has been shown in [3] that when the PureB layer surface coverage is maintained, the responsivity remains high, even in the critical region around 200-300 nm. The experimental evidence indicates that two factors play a role.…”