Robustness of carbon nanofiber-based MIM capacitors with ultra-high capacitance density to electrical and thermal stress

Bylund, Maria; Andersson, Rickard; Krause, Sascha; Saleem, Amin M; Marknas, Victor; Passalacqua, Elisa; Kabir, M Shafiq; Desmaris, Vincent

doi:10.1109/ectc32862.2020.00332

Cited by 4 publications

(2 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As can be seen, the manufactured MIM capacitors exhibit a step effect with the patterning of the top and bottom electrodes and the uniformity of the vacuum thermal evaporation coating in Figure 2a. Figure 2b shows a clear boundary at the interface between different layers, indicating the outstanding advantage of the compact high-k dielectric layers by lowtemperature ALD deposition, film composition control, and outstanding semi-conductor compatibility [26]. Moreover, the prepared low-temperature ALD dielectric layers are amorphous, which can reduce the leakage current along the edge of the grain boundaries [27].…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Xiong

Zhao³

et al. 2022

Molecules

View full text Add to dashboard Cite

This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al2O3-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm−2, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10−10 A·cm−2, and quadratic voltage coefficient of 303.6 ppm·V−2. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm−2 and 0.25 fF·µm−2. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.

show abstract

Section: Resultsmentioning

confidence: 99%

“…compatibility [26]. Moreover, the prepared low-temperature ALD dielectric layers are amorphous, which can reduce the leakage current along the edge of the grain boundaries [27].…”

Section: Resultsmentioning

confidence: 99%