Robustness of RF MEMS Capacitive Switches With Molybdenum Membranes

Palego, Cristiano; Deng, Jie; Peng, Zhen; Haldar, Subrata; Hwang, J.C.M.; Forehand, David; Scarbrough, Derek; Goldsmith, C. Franklin; Johnston, Ian; Sampath, S.; Datta, Animesh

doi:10.1109/tmtt.2009.2033885

Cited by 53 publications

(32 citation statements)

References 15 publications

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“…Spring constant also depends on the thermal residual stress and Poisson's ratio of the beam material which is given by [13].…”

Section: Ashby Approach To the Bridge Materials Selectionmentioning

confidence: 99%

“…Now temperature variation results in the change in thermal residual stress of the beam which is given by [13].…”

Section: Ashby Approach To the Bridge Materials Selectionmentioning

confidence: 99%

“…where I is the current in the switch beam, and R is the beam resistance which is given by [13] R = βρL 4tw (12) where β is a constant and related to the current crowding into the membrane, and ρ is electrical resistivity of the beam. From the Equations (11) and (12), we can conclude that power loss in beam structure is directly proportional to the electrical resistivity of the bridge material.…”

Section: Ashby Approach To the Bridge Materials Selectionmentioning

confidence: 99%

“…(iii) Thermal residual stress For large RF signals, the MEMS bridge experiences the temperature change due to self heating which further causes the change in thermal residual stress which is given by [13]. ∆σ = E∆αP loss R T H (15) where P loss is RF power loss, and R T H is thermal resistance which is given as [13].…”

Section: Ashby Approach To the Bridge Materials Selectionmentioning

confidence: 99%

“…Through literature review [11][12][13][14] it has been observed that the possible materials used for bridge material for fixed-fixed beam capacitive shunt switch are gold, aluminum, platinum, molybdenum, copper, nickel, alumina, and silicon nitride. In this study, the key material indices considered for MEMS capacitive switch are Young's modulus, electrical resistivity, Poisson's ratio, thermal expansion coefficient, and thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

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Material Selection of Rf-Mems Switch Used for Reconfigurable Antenna Using Ashby's Methodology

Sharma¹,

Gupta²

2012

PIER Letters

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Abstract-This paper reports material selection methodology for radio frequency -micro electro mechanical systems (RF-MEMS) switches used for reconfigurable antennas. As there are variety of materials available to design engineer, a proper technique to select the best possible material is needed. Three primary performance indices, pull-in voltage, RF-loss, and thermal residual stress, are used to obtain the desired performance. The selection chart shows that aluminum is the most suitable material for being used as bridge material in RF-MEMS switches to provide the best performance in reconfigurable antenna.

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“…Spring constant also depends on the thermal residual stress and Poisson's ratio of the beam material which is given by [13].…”

Section: Ashby Approach To the Bridge Materials Selectionmentioning

confidence: 99%

“…Now temperature variation results in the change in thermal residual stress of the beam which is given by [13].…”

Section: Ashby Approach To the Bridge Materials Selectionmentioning

confidence: 99%

Section: Ashby Approach To the Bridge Materials Selectionmentioning

confidence: 99%

Section: Ashby Approach To the Bridge Materials Selectionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Material Selection of Rf-Mems Switch Used for Reconfigurable Antenna Using Ashby's Methodology

Sharma¹,

Gupta²

2012

PIER Letters

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Ultrabroadband (DC–80 GHz) RF MEMS DC/capacitive load shunt switch

Narang,

Shrivastava,

Basu

et al. 2023

Micro & Optical Tech Letters

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This study presents the design and fabrication of a novel direct current (DC)/capacitive radio frequency (RF) Micro‐Electro‐Mechanical Systems (MEMS) switch in the ultrabroadband range from DC to 80 GHz. This proposed RF MEMS switch consists of two arms, with one arm providing a DC loading state (), whereas the second arm provides a capacitive loading state () to the ground when pull‐in voltage is applied. Insertion loss less than 1.85 dB and return loss better than 10 dB are achieved in the OFF state () from DC to 80 GHz (no pull‐in voltage is applied). Due to the novel design topology, this switch can act as a DC‐only switch (0–17 GHz) that provides isolation better than 25 dB during the state. A capacitive‐only switch (48–80 GHz) provides isolation better than 17 dB. This proposed structure can act as either DC(S1) or a capacitive () switch (17–48 GHz) and provides isolation better than 10 dB in either state. This proposed switch finds its best application in reconfigurable circuits like phase shifters due to switching between DC and capacitive loading during the On state from 17 to 48 GHz. The proposed switch's measured pull‐in and lift‐off voltages are 3.5 and 2.85 V, respectively.

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Role of the electro-thermo-mechanical multiple coupling on the operation of RF-microswitch

Brusa

Munteanu

2012

Microsyst Technol

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A phenomenological approach is proposed to identify some effects occurring within the structure of the microswitch conceived for radio frequency application. This microsystem is operated via a nonlinear electromechanical action imposed by the applied voltage. Unfortunately, it can be affected by residual stress, due to the microfabrication process, therefore axial and flexural behaviors are strongly coupled. This coupling increases the actuation voltage required to achieve the so-called ''pull-in'' condition. Moreover, temperature may strongly affect strain and stress distributions, respectively. Environmental temperature, internal dissipation of material, thermo-elastic and Joule effects play different roles on the microswitch flexural displacement. Sometimes buckling phenomenon evenly occurs. Literature show that all those issues make difficult an effective computation of ''pull-in'' and ''pull-out'' voltages or evenly distinguishing the origin of some failures detected in operation. Analysis, numerical methods and experiments are applied to an industrial test case to investigate step by step the RF-microswitch operation. Multiple electro-thermomechanical coupling is first modeled to have a preliminary and comprehensive description of the microswitch behavior and of its reliability. ''Pull-in'' and ''pull-out'' tests are then performed to validate the proposed models and to find suitable criteria to design the RF-MEMS.

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Robustness of RF MEMS Capacitive Switches With Molybdenum Membranes

Cited by 53 publications

References 15 publications

Material Selection of Rf-Mems Switch Used for Reconfigurable Antenna Using Ashby's Methodology

Material Selection of Rf-Mems Switch Used for Reconfigurable Antenna Using Ashby's Methodology

Ultrabroadband (DC–80 GHz) RF MEMS DC/capacitive load shunt switch

Role of the electro-thermo-mechanical multiple coupling on the operation of RF-microswitch

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