Inorganic halide CsPbI3 perovskite colloidal quantum dots (QDs) possess remarkable potential in photovoltaics and light-emitting devices owing to their excellent optoelectronic performance. However, the poor stability of CsPbI3 limits its practical applications. The ionic radius of SCN − (217 pm) is comparable to that of I − (220 pm), whereas it is marginally larger than that of Br − (196 pm), which increases the Goldschmidt tolerance factor of CsPbI3 and improves its structural stability. Recent studies have shown that adding SCN − in the precursor solution can enhance the crystallinity and moisture resistance of perovskite film solar cells; however, the photoelectric properties of the material post SCN − doping remain unconfirmed. To date, it has not been clarified whether SCN − doping occurs solely on the perovskite surfaces, or if it advances within their structures. In this study, we synthesized inorganic perovskite CsPbI3 QDs via a hot-injection method. Pb(SCN)2 was added to the precursor for obtaining SCN − -doped CsPbI3 (SCN-CsPbI3). X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) were conducted to demonstrate the doping of SCN − ions within the perovskite structures. XRD and TEM indicated a lattice expansion within the perovskite, stemming from the large steric hindrance of the SCN − ions, along with an enhancement in the lattice stability due to the strong bonding forces between SCN − and Pb 2+ . Through XPS, we confirmed the existence of the S peak, and further affirmed that the bonding energy between Pb 2+ and SCN − was stronger than that between Pb 2+ and I − . The space charge limited current and time-resolved photoluminescence results demonstrated a decrease in the trap density of the perovskite after being doped with SCN − ; therefore, the doping process mitigated the defects of QDs, thereby increasing their optical performance, and further enhanced the bonding energy of Pb-X and crystal quality of QDs, thereby improving the stability of perovskite structure. Therefore, the photoluminescence quantum yield (PLQY) of the SCN-CsPbI3 QDs exceeded 90%, which was significantly higher than that of pristine QDs (68%). The high PLQY indicates low trap density of QDs, which is attributed to a decrease in the defects. Furthermore, the SCN-CsPbI3 QDs exhibited remarkable water-resistance performance, while maintaining 85% of their initial photoluminescence intensity under water for 4 h, whereas the undoped samples suffered complete fluorescence loss due to the phase transformations caused by water molecules. The SCN-CsPbI3 QDs photodetector measurements demonstrated a broad band range of 400-700 nm, along with a responsivity of 90 mA•W −1 and detectivity exceeding 10 11 Jones, which were considerably higher than the corresponding values of the control device (responsivity: 60 mA•W −1 and detectivity: 10 10 Jones). Finally, extending the doping of SCN − into CsPbCl3 and CsPbBr3 QDs further enhanced their optical properties on a significant scale.