Chalcogenide glasses or amorphous semiconductors are the attractive materials for optoelectronics investigations. Surface morphology and crystallization kinetics parameters are play an important role to define their possible uses. In such materials a metal containing multicomponent alloy offers fractured surface morphology. Therefore, this work deals the fractured surface morphologies and crystallization kinetics of Se 93−x Zn 2 Te 5 In x (0 ≤ x ≤ 10) multicomponent chalcogenide alloys. These materials have been exhibited the glass transition temperature (T g , onset crystallization temperature (T c , peak crystallization temperature (T p at different DSC heating rates. Activations energies (E t , E c and E p of crystallizations at T g , T c and T p can be obtained by employing the Moynihan and Takhor described approaches. Subsequently, the order of crystallizations (Avrami exponent (n)) also has been discussed. Outcomes demonstrate the surface morphology and crystallizations kinetics parameters vary with alloys compositions and obtained optimum for 6 atomic weight percentage of indium concentration. Surface morphological and crystallizations kinetics parameter variations in these materials could be explained with the help of chemical bond theory of solids.