Role of an oxide interface in a resistive switch

Kumari, Karuna; Kar, Subhasmita; Thakur, Awalendra K.; Ray, Soumya Jyoti

doi:10.1016/j.cap.2021.10.006

Cited by 16 publications

(4 citation statements)

References 43 publications

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“…39,40 However, self-healable metallohydrogels are still challenging for scientists. On the other hand, due to their superior memory properties, resistive random-access memory [41][42][43][44][45] (RRAM) devices offer a wide range of applications in switching, non-volatile memory design, neuromorphic computing, etc. In RRAM devices the switching can occur between the high and low resistance states.…”

Section: Introductionmentioning

confidence: 99%

A Zn(ii)-metal ion directed self-healing wide bandgap semiconducting supramolecular metallohydrogel: effective non-volatile memory design for in-memory computing

Roy,

Dhibar,

Karmakar

et al. 2024

Mater. Adv.

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Section: Introductionmentioning

confidence: 99%

A Zn(ii)-metal ion directed self-healing wide bandgap semiconducting supramolecular metallohydrogel: effective non-volatile memory design for in-memory computing

Roy,

Dhibar,

Karmakar

et al. 2024

Mater. Adv.

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“…Among the family of memory devices, nonvolatile memory (NVM) plays an important role and Resistive Random Access Memory , (RRAM) has received significant attention due to its simple architecture, smaller size, long write/read endurance ,, (>10 16 cycles), faster operating speed, excellent scalability (<10 nm), higher storage density, low cost, low power consumption, excellent compatibility etc. Most popular RRAM devices are transition metal oxide based − , but issues like presence of defects, interstitial impurities, grain boundary and polar discontinuity etc. often halter the performance reproducibility.…”

Section: Introductionmentioning

confidence: 99%

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology

Roy,

Kumari,

Majumder

et al. 2024

ACS Appl. Bio Mater.

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Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current−voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.

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“…It is a favored choice for next-generation memory design due to its compatibility with CMOS architecture, simple structure, good manufacturability, low cost, low power consumption, high speed, long endurance, and dependability. While oxide materials are extensively researched for RRAM design, − scientists are searching for substitute materials to get over material limitations and improve performance. Such RRAM structures can be created using the metallohydrogel as an active material, which is advantageous for the development of flexible electronics.…”

Section: Introductionmentioning

confidence: 99%

Instantaneous Gelation of a Self-Healable Wide-Bandgap Semiconducting Supramolecular Mg(II)-Metallohydrogel: An Efficient Nonvolatile Memory Design with Supreme Endurance

Karmakar

Roy

Dhibar

et al. 2023

ACS Appl. Electron. Mater.

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An efficient strategy for room-temperature, atmospheric-pressure synthesis of a supramolecular metallohydrogel of the Mg(II) ion, i.e., Mg@3AP, using the metal-coordinating organic ligand 3-amino-1-propanol as a low-molecular-weight gelator (LMWG) in a water medium has been developed. Through a rheological analysis, we looked into the mechanical properties of the supramolecular Mg(II)-metallohydrogel. The self-healing nature of the metallohydrogel is confirmed along with the thixotropic characteristics. Investigation using field emission scanning electron microscopy revealed the hierarchical network of the supramolecular metallohydrogel. The EDX elemental mapping confirms the primary chemical constituents of the metallohydrogel. The possible metallohydrogel formation strategy has been analyzed through FT-IR spectroscopic studies. In this work, Schottky diode structures in a metal–semiconductor–metal geometry structures based on a magnesium(II) metallohydrogel (Mg@3AP) have been constructed, and charge transport behavior has been observed. Furthermore, here, it is demonstrated that the resistive random access memory (RRAM) device based on Mg@3AP exhibits bipolar resistive switching behavior at room temperature and ambient conditions. We have also looked into the switching mechanism through the formation (rupture) of conductive filaments between the metal electrodes to understand the process of resistive switching behavior. With a high on/off ratio (∼100), this RRAM device exhibits remarkable switching endurance over 10,000 switching cycles. These structures are suitable for use in nonvolatile memory design, neuromorphic computing, flexible electronics, and optoelectronics, among other fields, due to their simple fabrication procedures, reliable resistive switching behavior, and stability of the current system.

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Role of an oxide interface in a resistive switch

Cited by 16 publications

References 43 publications

A Zn(ii)-metal ion directed self-healing wide bandgap semiconducting supramolecular metallohydrogel: effective non-volatile memory design for in-memory computing

A Zn(ii)-metal ion directed self-healing wide bandgap semiconducting supramolecular metallohydrogel: effective non-volatile memory design for in-memory computing

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology

Instantaneous Gelation of a Self-Healable Wide-Bandgap Semiconducting Supramolecular Mg(II)-Metallohydrogel: An Efficient Nonvolatile Memory Design with Supreme Endurance

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