Role of annealing temperature in the oxide charge distribution in high- $$\kappa $$ κ -based MOS devices: simulation and experiment

Effect of ALD Processes on Physical and Electrical Properties of HfO2 Dielectrics for the Surface Passivation of a CMOS Image Sensor Application

“…The FGA samples showed higher Qf values for T-ALD and PE-ALD methods than as-deposited HfO2 films. The increased Qf values after VA and FGA conditions may be caused by interfacial layer formation, revealing the better field-effect passivation than as-synthesized HfO2 films[28]. After the FGA, the Dit values decreased, and the Qf values increased which implies the collective effect of the chemical as well as the field-passivation.…”