Role of annealing temperature on structural and optical properties of MgTiO3 thin films

Negi, Deepak; Shyam, Radhe; Nelamarri, Srinivasa Rao

doi:10.1016/j.mlblux.2021.100088

Cited by 8 publications

(3 citation statements)

References 12 publications

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“…Moreover, the value of the energy gap increased from 3.18 eV to 3.31 eV with the increase in the pH value from 9 to 11, which also agrees with Zainelabdin A. 31,32 . This effect is due to the change in nanostructure forms from the flower-to rodshaped, which reduces the transmittance while increasing the absorbance 33 .…”

Section: Resultssupporting

confidence: 83%

انماء تراكيب نانوية من أكسيد الزنك بطريقة التحلل المائي الحراري لقيم مختلفة من درجة الحامضية

Abbas,

Hassan,

Abdulmunem

2024

Baghdad Sci.J

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Flower- and rod-like nanostructures of zinc oxide were prepared by the hydrothermal method at 90°C for three hours. Three 0.028 molar solutions, with pH values of 9, 10, and 11, were deposited on glass substrate/ZnO seed layers. All the prepared samples had a polycrystalline diffraction pattern with dominant diffraction from the (002) plane. With increasing pH, the crystallite size increased to a maximum of 37.6 nm. The importance of the research lies in the growth of different nanostructures of zinc oxide by controlling the degree of pH, as the results showed the emergence of flower structures ZnO NFs at pH 11 with a particle size of 100-800 nm, and the development of nanostructures in the form of a bundle of rods at pH 10 with a particle size of 500-800 nm and the development of ZnO NRs in the form of solitary rods perpendicular to the surface at pH 9, with a grain size of 70-80 nm. The optical properties showed a decrease from 78.75% to 79.32% as the pH was increased from 9 to 11, and the value of the energy gap increased from 3.18 eV to 3.31 eV with the increase in the pH value from 9 to 11.

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Section: Resultssupporting

confidence: 83%

انماء تراكيب نانوية من أكسيد الزنك بطريقة التحلل المائي الحراري لقيم مختلفة من درجة الحامضية

Abbas,

Hassan,

Abdulmunem

2024

Baghdad Sci.J

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“…Upon enhancing the annealing time of NiS, slight shifting of peaks to smaller angle was observed represents the decrement in lattice strain upon increasing the annealing times. As annealing time increased, crystallinity of the NiS increased as reported by literature [35] . Additionally, SAED analysis verified the polycrystalline behavior of NiS related to (101), ( 110), ( 021) and ( 102) planes of XRD (Figure3c-e).…”

Section: Resultssupporting

confidence: 79%

Catalytic and antibacterial activity of annealed nickel sulfides quantum dots

Ikrama

2023

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In this research, nickel sulfide (NiS) quantum dots (QDs) were prepared through the co-precipitation method and annealed at same temperature with different time. This study aimed to check the influence of annealing time on catalytic reduction of rhodamine B () and antibacterial efficacy against E. coli. The synthesized NiS were characterized thorough XRD, UV-Vis, SAED and TEM analysis to check the effect of annealing time on structural, optical and morphological of QDs. XRD spectra depicted that crystallinity of the NiS increased upon enhancing the annealing time. Electronic transition spectroscopy exhibited the blue shift by increasing annealing time, leading to band gap energy enhancement. TEM images demonstrated that agglomeration of the QDs increased by increasing the annealing time. EDS spectra verified the formation of NiS QDs. SAED analysis confirmed the polycrystalline behavior of host and annealed NiS. The pure NiS demonstrated substantial catalytic reduction of dye in acidic medium comparison to other media. Moreover, host sample (NiS) exhibited maximum inhibition zone for E. coli at higher concentration.

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“…The transmittance is maximum in the visible range for all the films. The decrease in transmittance with an increase in sputtering temperature may be due to the scattering of light on rough surfaces, which might have occurred with high temperature [18]. The band gap of the ITO films increases with an increase in temperature as shown in figure 1(c).…”

Section: Structural and Optical Analysismentioning

confidence: 97%

Effect of RF-sputtering temperature of ITO electrodes on the resistive switching behaviour of ITO/RbPbI₃/Cu devices

Dehingia,

Ota,

Deb

et al. 2023

Phys. Scr.

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In this work, we deposit Indium doped Tin Oxide (ITO) on a glass substrate using the Radio-Frequency Sputtering technique at different temperatures and studied its structural and optical properties. Various structural, optical, and morphological studies are conducted on the ITO substrates. In addition, we have used these ITO films as conducting electrodes in MIM (metal-insulator-metal) type structures for resistive memory application. A resistive switching memory device based on RbPbI3 with sputtered ITO films as the bottom electrode is fabricated and studied for its electrical performance. It has been found that the device showed the write-once-read-many (WORM) nature at a sputtering temperature of 300 °C with a good OFF/ON ratio. The devices with ITO film sputtered a temperature below 300 °C do not show any switching behavior due to lower conductivity and improper surface morphology.

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Role of annealing temperature on structural and optical properties of MgTiO3 thin films

Cited by 8 publications

References 12 publications

انماء تراكيب نانوية من أكسيد الزنك بطريقة التحلل المائي الحراري لقيم مختلفة من درجة الحامضية

انماء تراكيب نانوية من أكسيد الزنك بطريقة التحلل المائي الحراري لقيم مختلفة من درجة الحامضية

Catalytic and antibacterial activity of annealed nickel sulfides quantum dots

Effect of RF-sputtering temperature of ITO electrodes on the resistive switching behaviour of ITO/RbPbI₃/Cu devices

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Role of annealing temperature on structural and optical properties of MgTiO3 thin films

Cited by 8 publications

References 12 publications

انماء تراكيب نانوية من أكسيد الزنك بطريقة التحلل المائي الحراري لقيم مختلفة من درجة الحامضية

انماء تراكيب نانوية من أكسيد الزنك بطريقة التحلل المائي الحراري لقيم مختلفة من درجة الحامضية

Catalytic and antibacterial activity of annealed nickel sulfides quantum dots

Effect of RF-sputtering temperature of ITO electrodes on the resistive switching behaviour of ITO/RbPbI3/Cu devices

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Effect of RF-sputtering temperature of ITO electrodes on the resistive switching behaviour of ITO/RbPbI₃/Cu devices