Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices

Abstract

We report the effects of barrier layer on the electroluminescence properties of the SiN-based multilayer light-emitting devices (LEDs). It is found that the emission efficiency is significantly enhanced by more than one order of magnitude compared to that of LED without barrier layer. Meanwhile, the emission wavelength can also be tuned from 620to510nm by controlling the Si∕N ratio of the barrier layer. The improved performance of LEDs can be attributed to the variation in the band offset between the Si-rich SiN well layer and the N-rich SiN barrier layer.

Blue–green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures

“…No Si-ncs were observed inside this region, in accordance with Ref. [9]. Moreover, the zone between silicon nitride and crystalline silicon (c-Si) is a silicon oxide layer about 13 nm thick.…”

Photonics Application of Silicon Nanocrystals

“…Using multilayer structures in electroluminescence experiments has a relatively long history [122][123][124][125][126]. Nowadays, interest in multilayers has been revived [127][128][129], supported by several enhanced properties of the multilayer LED with respect to a single-layer nanocrystalline silicon LED: low turn-on voltages, low leakage currents, high nanocrystal density, and more uniform nanocrystal size. The main advantage of the multilayer structure is the possibility of exercising a better control over the nanocrystal formation through the confined silicon growth and, hence, the possibility of accurately designing the nanocrystalline silicon layer of the LED.…”

Influence of the oxygen content in obtaining tunable and strong photoluminescence from low-temperature grown silicon oxycarbide films

“…In the past decade, luminescent Si-based materials have aroused great research interests owing to their potential application in Si-based monolithic optoelectronic integrated circuits [1][2][3][4][5][6][7][8][9][10][11][12][13]. Since bulk silicon is a poor light emitter due to its indirect band gap that requires phonons for momentum conservation, a tremendous amount of research has been devoted to Si nanostructure embedded in different dielectric matrices such as silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiN x O y ) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15].…”

“…Since bulk silicon is a poor light emitter due to its indirect band gap that requires phonons for momentum conservation, a tremendous amount of research has been devoted to Si nanostructure embedded in different dielectric matrices such as silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiN x O y ) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Although research in these system has made great progress, unfortunately, there is still a long way towards the realization of practical application.…”