Role of Bilayer Resist in 157 nm Lithography

Synthesis and Characterization of Silicon-Containing Block Copolymers from Nitroxide-Mediated Living Free Radical Polymerization

“…When exposed to oxygen plasma, the silicon-containing polymers are oxidized to silicon oxide, whose high thermal and mechanical stability has made it a long-time dielectric insulator in microchip fabrication. The high etch resistance to oxygen plasma compared to organic polymers makes silicon-containing polymers favorable as bilayer resists to pattern high aspect ratio structures − as well as to create nanoporous ceramic thin films with a variety of morphologies. , The use of silicon-containing thin film as a template may provide an alternative approach to broaden the application of block copolymers for nanopatterning. Block copolymers of polystyrene and hydrosiloxane-modified poly(diene) have been demonstrated as bilayer photoresists that provide high sensitivity and etch selectivity. ,, Thus, the possibility of combining photolithographic groups and silicon-containing groups in block copolymers offers a new route to pattern hierarchical nanostructures.…”

“…When exposed to oxygen plasma, the silicon-containing polymers are oxidized to silicon oxide, whose high thermal and mechanical stability has made it a long-time dielectric insulator in microchip fabrication. The high etch resistance to oxygen plasma compared to organic polymers makes silicon-containing polymers favorable as bilayer resists to pattern high aspect ratio structures [6][7][8][9] as well as to create nanoporous ceramic thin films with a variety of morphologies. 10,11 The use of silicon-containing thin film as a template may provide an alternative approach to broaden the application of block copolymers for nanopatterning.…”