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Full intermetallic compound (IMC) solder joints have great potential in the use of high temperature devices for its higher melting point and excellent mechanical performance. The key to accelerate the IMC formation of solder joints is increasing the diffusion of atoms in solder materials and substrate, which can promote the combination of atoms to form IMC under extra driving forces. We raised a SLID bonding experiment by controlling the distance between Cu pads, results show that the thickness of IMC with our method is 5.66 μm which is 1.4 times than the traditional TC bonding technique. To explain this phenomenon, we investigated the effects of atomic concentration (measured by relative atomic concentration C) on the atomic diffusivity of atoms in solid Cu and liquid Sn via molecular dynamics simulations. It shows that the diffusion coefficient of Sn with lower atomic concentration by displacement control method (C=0.8, D=1.18E-06 cm2/s) will be up to 4.2 times higher than it by traditional thermal-compression method (C=0.91, D=2.78E-07 cm2/s). By comparing the stress evolutions of each simulation, we can get the conclusion that the displacement control method would offer a traction stress on the sample, and promote the atomic diffusion of liquid Sn, this can be explained as it can prevent Sn atoms being balanced due to volume shrinkage and keep atoms in an active state for diffusion. Both of these results present us a potential way to increase the IMC formation speed for fabricating IMC solder joints.
Full intermetallic compound (IMC) solder joints have great potential in the use of high temperature devices for its higher melting point and excellent mechanical performance. The key to accelerate the IMC formation of solder joints is increasing the diffusion of atoms in solder materials and substrate, which can promote the combination of atoms to form IMC under extra driving forces. We raised a SLID bonding experiment by controlling the distance between Cu pads, results show that the thickness of IMC with our method is 5.66 μm which is 1.4 times than the traditional TC bonding technique. To explain this phenomenon, we investigated the effects of atomic concentration (measured by relative atomic concentration C) on the atomic diffusivity of atoms in solid Cu and liquid Sn via molecular dynamics simulations. It shows that the diffusion coefficient of Sn with lower atomic concentration by displacement control method (C=0.8, D=1.18E-06 cm2/s) will be up to 4.2 times higher than it by traditional thermal-compression method (C=0.91, D=2.78E-07 cm2/s). By comparing the stress evolutions of each simulation, we can get the conclusion that the displacement control method would offer a traction stress on the sample, and promote the atomic diffusion of liquid Sn, this can be explained as it can prevent Sn atoms being balanced due to volume shrinkage and keep atoms in an active state for diffusion. Both of these results present us a potential way to increase the IMC formation speed for fabricating IMC solder joints.
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