Role of defects and microstructure on the electrical properties of solution-processed Al-doped ZnO transparent conducting films

Anurag, Kumar; Ahmad, Md. Imteyaz

doi:10.1007/s00339-020-03767-0

Cited by 19 publications

(5 citation statements)

References 74 publications

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“… 19 After Al doping, the optical bandgap of ZnO slightly increased from 3.28 to 3.3 eV ( Figure 1 c), which was consistent with previous studies. 11 , 20 , 21 This phenomenon can be explained by the Burstain–Moss effect when the electron carrier concentration exceeded the conduction band (CB) of ZnO due to the high doping with Al. 20 The enhancement of electron concentration of ZnO due to Al doping was also confirmed by the decrease in the electrical resistivity from 7672 Ω cm (for the ZO film) to 3145 Ω cm (for the AZO film at 1.5 mol % Al content).…”

Section: Resultsmentioning

confidence: 99%

“…As shown in Figure 1 d, both the PL spectra showed the emission peaks at 3.30–3.28 eV, 2.98–3.01 eV, 1.94–2.00 eV, and 1.74–1.75 eV assigned to the transitions from the ZnO conduction band (CB) to the ZnO valence band (VB), Zn-vacancy ( V Zn ), O-interstitial (O i ), and O-vacancy ( V O ), respectively. 21 , 22 Notably, the PL of AZO additionally showed a prominent emission peak at 3.22 eV, corresponding to the transition from the Zn-substituted Al (Al Zn ) state to VB. 21 , 22 This confirms that the doping Al would introduce Zn-substituted Al sited in the ZnO system, agreeing with the XRD results.…”

Section: Resultsmentioning

confidence: 99%

“… 21 , 22 Notably, the PL of AZO additionally showed a prominent emission peak at 3.22 eV, corresponding to the transition from the Zn-substituted Al (Al Zn ) state to VB. 21 , 22 This confirms that the doping Al would introduce Zn-substituted Al sited in the ZnO system, agreeing with the XRD results.…”

Section: Resultsmentioning

confidence: 99%

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Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films

Tran,

Nguyen,

Bark

2023

ACS Omega

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Al-doped ZnO (AZO) thin films are effective n-type semiconductors for ultraviolet (UV) detection because of their low cost, high electron mobility, and high sensitivity to UV light, especially in the UVA spectrum. However, a reasonable compromise between performance (such as sensitivity, detectivity, and response time) and fabrication ease remains an obstacle to the practicability of AZO-based UV photodetectors. To address this issue, we propose an efficient strategy to achieve a large AZO photoactive area for outstanding performance, along with a facile sol−gel method. Consequently, the device exhibits a superb on/off ratio of >10 4 , a high detectivity of 1.85 × 10 12 Jones, and a fast response speed under 365 nm UVA illumination without external energy consumption. Hence, this study suggests a selfpowered and high-performance nanoporous AZO-based UVA detector with an environmentally friendly scalable process that satisfies industrial production requirements for numerous practical UV-detection applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films

Tran,

Nguyen,

Bark

2023

ACS Omega

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“…Therefore, it is possible to exploit fabrication strategies based on novel deposition techniques like ink-jet printing, roll-to-roll, spray, among others, and consequently, improve the development of the large area electronics. Nonetheless, the limited temperature of processing can reduce the overall quality of the semiconductor layers, due to increased defects, inhomogeneities, roughness, porosity, etc, and consequently, the device behaviour can be compromised [4]. Hence, there is an important concern related with the trade-off between the reduction of the processing temperature and the device performance.…”

Section: Introductionmentioning

confidence: 99%

Impact of the series resistance on reverse current of solution-processed Schottky-Barrier-Diodes based on ZnO-rods

Tinoco,

Hernandez,

Garcia

et al. 2023

Eng. Res. Express

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In the last years, the implementation of solution-processing techniques, as well as the use of nanostructured oxide semiconductors, have pursued the development of large-area electronic systems. However, the proper understanding of the electrical characteristics of this type of devices is needed with the aim to properly implement potential applications. In general, the diode behaviour at forward condition has been analysed in the literature, but at reverse condition further research is required. Therefore, in this work, the fabrication and electrical characterization at reverse condition of solution-processed Schottky-Barrier-Diodes based on ZnO-rods is presented. Two different conduction mechanisms with a transition occurring around –2 V were observed. Also, numerical solutions of the diode reverse current characteristic, which includes the series resistance (RS) for both conduction mechanisms, were implemented and the impact of the series resistance was addressed. Finally, a numerical optimization strategy was used to determine the diode parameters which best fit the experimental current.

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“…Al-doped ZnO (AZO) transparent conducting films are more highly desirable for their potential applications compared with SnO 2 :F and In 2 O 3 :Sn films, because they have good characteristics, such as abundant resources, non-toxicity, low cost and stability under a hydrogen plasma environment [3,4]. Up to now, the crater-like single-textured structures of AZO films, as mainstream light trapping structures, can be obtained by various methods, including wet chemical erosion after sputtering deposition and plasma etching, etc.…”

Section: Introductionmentioning

confidence: 99%

Efficient Light Trapping from Nanorod-Like Single-Textured Al-Doped ZnO Transparent Conducting Films

Zhu

Wang

et al. 2021

Coatings

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Nanorod-like single-textured Al-doped ZnO (AZO) transparent conducting films were prepared by the simple hydrothermal growth of AZO nanorods on AZO seed layers. The structures, morphologies, optoelectronic properties and light trapping abilities of the AZO films were investigated. The morphological changes of single-textured AZO films depending on growth temperature were shown. Above all, the relation between light trapping abilities and surface morphologies of the single-textured AZO films was studied in detail. The nanorod-like single-textured AZO films prepared at 100 °C exhibited low resistivity, high total transmittance and remarkable enhancement of haze value, which can be acted as transparent electrodes for improving the conversion efficiency of Si-based thin film solar cells.

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Role of defects and microstructure on the electrical properties of solution-processed Al-doped ZnO transparent conducting films

Cited by 19 publications

References 74 publications

Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films

Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films

Impact of the series resistance on reverse current of solution-processed Schottky-Barrier-Diodes based on ZnO-rods

Efficient Light Trapping from Nanorod-Like Single-Textured Al-Doped ZnO Transparent Conducting Films

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