Motivated by the recent synthesis
of the graphene-like C
3
N nanosheet, the geometrical structures
and electronic properties
of its ribbon form, that is, C
3
N nanoribbons (C
3
NNRs), are investigated by first-principles calculations. It is found
that there are five types of energetically favorable H-terminated
edges in the C
3
NNRs. Different from graphene nanoribbons,
the corresponding stable C
3
NNRs are all nonmagnetic semiconductors
regardless of the edge shape and termination. However, their band
feature and gap size can be modulated by the ribbon width and edge
termination, which brings direct-, quasi-direct-, and indirect-band-gap
semiconducting behaviors in the nanoribbons. Comparing to the C
3
N nanosheet, the work function is reduced in the C
3
NNRs with fully di- and monohydrogenated edges, which results in
a type-II band alignment with SiC and silicane nanosheets. More interestingly,
the combined hetero-nanostructures will be promising excitonic solar
cell materials with high power conversion efficiencies up to 17–21%.
Our study demonstrates that the C
3
NNRs have distinct edge
stabilities and variable semiconducting behaviors, which endow fascinating
potential applications in the fields of solar energy and nanodevices.