Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition

Esposito, Fulvio; Bosi, Matteo; Attolini, G.; Rossi, Francesca; Panasci, Salvatore Ethan; Fiorenza, Patrick; Giannazzo, Filippo; Fabbri, Filippo; Seravalli, L.

doi:10.1016/j.apsusc.2023.158230

Cited by 8 publications

(1 citation statement)

References 57 publications

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“…Extending the Model to 2D TMD Annealing: A significant part of the literature is devoted to the synthesis of 2D TMD crystals by chalcogenation of predeposited thin films of a transition metal [85,86] or its compounds. [87][88][89][90] In contrast to CVD processes, the condensed phase composition changes continuously during chalcogenation, so that the surface remains in nonequilibrium conditions until chalcogenation is completed. The model proposed in this article assumes a near-equilibrium state on the surface and thus cannot be directly used to analyze chalcogenation.…”

Section: Methodsmentioning

confidence: 99%

Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides

Voronenkov,

Groven,

Medina Silva

et al. 2024

Physica Status Solidi (a)

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2D transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) method using a wide variety of precursors. Being a major electrical performance limiter, the TMD crystal grain size strongly differs between the various CVD precursor chemistries from nano‐ to millimeter‐sized crystals. However, it remains unclear how the CVD precursor chemistry affects the nucleation density and resulting TMD crystal grain size. This work postulates guiding principles to design a CVD process for highly crystalline TMD deposition using a quantitative analytical model benchmarked against the literature. The TMD nucleation density reduces favorably under low supersaturation conditions where the metal precursor sorption on the starting surface is reversible and the corresponding metal precursor desorption rate exceeds the overall deposition rate. Such reversible precursor adsorption guarantees efficient long‐range gas‐phase lateral diffusion of precursor species in addition to short‐range surface diffusion, which vitally increases crystal grain size. The proposed model explains the large spread in experimentally observed TMD nucleation densities and crystal grain sizes for state‐of‐the‐art CVD chemistries. Ultimately, it empowers the reader to interpret and modulate precursor adsorption and diffusion reactions through designing CVD precursor chemistries.

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Section: Methodsmentioning

confidence: 99%

Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides

Voronenkov,

Groven,

Medina Silva

et al. 2024

Physica Status Solidi (a)

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Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications

Panasci,

Schilirò,

Roccaforte

et al. 2024

Adv Funct Materials

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Semiconductor transition metal dichalcogenides (TMDs), such as MoS2, are currently regarded as key‐enabling materials for sub‐1 nm channel transistors, beyond‐complementary metal–oxide–semiconductor electronic and optoelectronic devices and sensors. Owing to this wide application potential, several bottom‐up and top‐down synthesis approaches for these materials have been explored so far. Despite the huge progresses in scalable deposition methods (such as chemical vapor deposition, metal–organic chemical vapor deposition), exfoliated layers from bulk crystals still represent the benchmark for record electronic properties of TMDs. Among exfoliation approaches, metal‐assisted mechanical exfoliation emerges as the most effective method to separate large‐area (mm2 to cm2) single‐crystalline monolayer membranes of TMDs (and many other 2D materials) from the parent bulk crystals. This paper reviews the state‐of‐the‐art in this field, from current understanding of MoS2 exfoliation mechanisms on Au (considered as a model system), to the main device applications of as‐exfoliated and transferred large‐area MoS2 membranes (including Au/MoS2/Au memristors, MoS2 photodetectors, and field‐effect transistors). Perspectives of this method in the realization of arrays of 2D heterojunction devices, including Moirè superlattice devices, and open challenges for its widespread application are finally discussed.

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Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Panasci,

Schilirò,

Koos

et al. 2024

Applied Physics Letters

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Thermal sulfurization of ultra-thin Mo-based films represents a promising approach for large-area growth of MoS2. In this paper, we demonstrated that the crystalline quality (domains size and defects density), strain, doping, and light emission properties of monolayer (1L) MoS2 obtained from sputter deposited MoOx films on a c-sapphire substrate can be tailored by the sulfurization temperature (Ts) in the range from 700 to 800 °C. Starting from a continuous film with a nanocrystalline domains structure at Ts = 700 °C, a distribution of 1L MoS2 triangular domains with 2.1 ± 0.6 and 2.6 ± 1.6 μm average sizes was obtained by increasing Ts to 750 and 800 °C, respectively. The increase in Ts was accompanied by a strong (25×) enhancement of the photoluminescence (PL) intensity. Furthermore, the average doping of MoS2, evaluated from Raman analyses, evolved from a strong p-type doping (∼1 × 1013 cm−2) after Ts = 700 °C, ascribed to residual MoO3 in the film, to a low average n-type doping (∼0.04 × 1013 cm−2) after Ts = 800 °C. The wide tunability of doping and PL of 1L MoS2 by the sulfurization temperature can be exploited to tailor material properties for different specific applications.

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Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition

Cited by 8 publications

References 57 publications

Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides

Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides

Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications

Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

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