Role of Deposition Potential on the Optical Properties of SnSSe Thin Films

Abstract

SnSSe solid solution thin films were electrosynthesized from an aqueous solution by potentiostatic method. Films were deposited at different potentials in the range of -700 mV to -1000 mV vs SCE. XRD patterns revealed that the deposited films exhibited polycrystalline orthorhombic structure with preferred orientation along (111) crystallographic plane. The optical band gap value was calculated from transmittance and absorption data and the films were found to have direct band gap found to be 1.08 eV-1.25 eV. The refractive index, extinction coefficient, real and imaginary part of dielectric constants and optical conductivity of the SnSSe thin films has been calculated. The value for the refractive index lies between 2.5 and 3.1 and value of extinction coefficient lies between 0.035 and 0.052. Surface morphological studies revealed pellet shaped grains occupying the entire surface of the film distributed homogeneity.

Structural investigations of SnS1−xSexsolid solution synthesized from chalcogeno-carboxylate complexes of organo-tin by colloidal and solvent-less routes

“…SnS 1-x Se x alloy thin films were deposited by the electrodeposition method, using sodium thiosulfate (Na 2 S 2 O 3 ), selenium dioxide (SeO 2 ) and stannous chloride (SnCl 2 ). 14,21,22 The effect of the different parameters, such as, potential, deposition time and composition on the electronic properties of the solid solution were studied. Another common method to prepare solid solutions is solid state synthesis, whereby the elements are mixed in stoichiometric quantities and heated at high temperature for a prolonged time.…”

“…12 Hence, tin chalcogenides are highly desirable as thin films, nanocrystals and alloys with controllable morphology, size and composition for tunable electronic properties. 13,14 SnS and SnSe are both isostructural and exist in the orthorhombic structure, and each unit cell consists of eight atoms. 15 SnSe has both direct and indirect band gaps of around 0.9 eV and 1.3 eV respectively.…”

Stacked 2D nanoflake-structured thin films of chalcogenide SnSxSe(y−x) grown by spray pyrolysis: structural, optical and electrical properties

“…These two results make these ternary compounds suitable for its use as part of solar cells and photoelectrochemical solar cells [13], phototransistors [14], high-performance thermoelectric material [15], ultrafast laser [16], a high capacity anode for batteries [17], etc. This set of compounds has been deposited by different techniques, some of them to obtain single crystals, thin films and 2D materials like direct vapor transport technique [12], solid synthesis [18], iodine vapor transport [19,20], transport reaction [21], thermal treatment [22] and electrodeposition [13,23]. SnS x Se (2-x) compounds are a family of semiconductors with a hexagonal crystal structure, directly related to the binary compounds SnSe 2 and SnS 2 which has a CdI 2 -type structure with space group P-3m1 and it is well known because of its particular structure, which is composed of atomic layers bonded one to another through Van der Waals interactions that promote the formation of flakes.…”

The SnSSe SA with high modulation depth for passively Q-switched fiber laser

“…SnSSe has been reported to deliver the highest capacities during the long-term cycling processes compared with other non-composite electrode materials (for example, MoS 2 , SnS 2 , SWCNT, and etc) [34]. The bandgap energy of 1.08 eV endows the unique advantages in thermoelectric converters and solar cells [35,36].…”