2020
DOI: 10.1103/physrevb.101.205411
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Role of disorder in plasmon-assisted near-field heat transfer between two-dimensional metals

Abstract: We perform a theoretical study of the near-field heat transfer between two atomically thin metallic layers, isolated galvanically but coupled by the Coulomb interaction, within the framework of fluctuational electrodynamics in the Coulomb limit. We clarify the role of disorder and spatial dispersion, and identify several distinct regimes of the heat transfer. We find that the plasmon contribution to the heat current is suppressed in both the clean and diffusive limits, but dominates in a parametrically wide cr… Show more

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Cited by 8 publications
(15 citation statements)
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“…Since λT = 7.6 μm at T = 300 K, in such structure the crossover to electrostatics occurs at a few nanometers. We note that in the (ld) regime, the heat transfer is mainly determined by rather small wave vectors [18], so that even at d = 1 nm, we obtain 1/k 100 nm, and the local response assumption should still be formally valid. However, at nanometric distances, other physical effects may come into play (electron or phonon tunneling, surface roughness, etc.…”
Section: Resultsmentioning
confidence: 83%
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“…Since λT = 7.6 μm at T = 300 K, in such structure the crossover to electrostatics occurs at a few nanometers. We note that in the (ld) regime, the heat transfer is mainly determined by rather small wave vectors [18], so that even at d = 1 nm, we obtain 1/k 100 nm, and the local response assumption should still be formally valid. However, at nanometric distances, other physical effects may come into play (electron or phonon tunneling, surface roughness, etc.…”
Section: Resultsmentioning
confidence: 83%
“…(3a)-(3d), with labels corresponding to lowtemperature plasmonic, high-temperature plasmonic, lowtemperature diffusive, and high-temperature diffusive, are the TM evanescent contributions that remain in the Coulomb limit and were calculated in Ref. [18]. Equations (3e) and (3f) (with labels corresponding to low-temperature traveling electric and high-temperature traveling electric) are the traveling TE contributions which dominate over the traveling TM contributions by the logarithmic factor ln(1/G).…”
Section: Resultsmentioning
confidence: 99%
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