2004
DOI: 10.1002/pssc.200304046
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Role of excitons in the persistent photocurrent of GaN‐based MSM detectors

Abstract: In this work we have studied the role of excitons in two different low barrier metal-semiconductor-metal (MSM) GaN-based UV photodetectors at high temperature. The active material of the two MSM devices consists of bulk GaN grown by metal organic chemical vapour deposition (MOCVD), and of an AlGaN/GaN heterostructure forming a two-dimensional electron gas (2DEG) grown by molecular beam epitaxy/magnetron sputtering epitaxy (MBE/MSE) system. The response of the devices has been characterized at the wavelength of… Show more

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Cited by 2 publications
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“…In particularly, the persistent photoconductivity (PPC) effect can influence significantly the characteristic of UV AlGaN/GaN photodetectors. There are a few models explaining the origin of the PPC phenomenon in III-V semiconductors [4][5][6][7][8][9][10]. One of the them attributes the PPC to the generation of electron-holes pairs with a subsequent spatial separation of the photoexcited carriers by macroscopic potential barrier due to band bending at the surfaces or interfaces [5,6,10].…”
Section: Introductionmentioning
confidence: 98%
“…In particularly, the persistent photoconductivity (PPC) effect can influence significantly the characteristic of UV AlGaN/GaN photodetectors. There are a few models explaining the origin of the PPC phenomenon in III-V semiconductors [4][5][6][7][8][9][10]. One of the them attributes the PPC to the generation of electron-holes pairs with a subsequent spatial separation of the photoexcited carriers by macroscopic potential barrier due to band bending at the surfaces or interfaces [5,6,10].…”
Section: Introductionmentioning
confidence: 98%