2018
DOI: 10.1016/j.jlumin.2018.02.050
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Role of fluorine doping on luminescence centers and enhanced photocatalytic performance of nebulizer sprayed TiO2 films under visible light

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Cited by 11 publications
(3 citation statements)
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“…The phonons lifetime of films can be calculated by 27 : where ΔE represents the uncertainty in the energy of the phonon mode, ћ denotes Planck’s constant divided by 2π and Γ is the full-width at half maximum of the Raman peak in units of cm -1 . The related data of the phonon lifetime are illustrated in Table 2 .…”
Section: Methodsmentioning
confidence: 99%
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“…The phonons lifetime of films can be calculated by 27 : where ΔE represents the uncertainty in the energy of the phonon mode, ћ denotes Planck’s constant divided by 2π and Γ is the full-width at half maximum of the Raman peak in units of cm -1 . The related data of the phonon lifetime are illustrated in Table 2 .…”
Section: Methodsmentioning
confidence: 99%
“…As a result of changing the substrate type and the employed deposition angle, the crystalline structure of samples changes; one of which is the change in crystallite size that is effective in the phonons lifetime. Actually, with the increment of the crystallite size, the lifetime of phonon increases too 27 . In addition, with the increase of deposition angle and increase of the defects in the structure, the phonon lifetime increases 28 .…”
Section: Methodsmentioning
confidence: 99%
“…Element doping is a convenient method used to introduce foreign materials and structures into semiconductors. Doping metal and non-metal elements in TiO 2 refers to the introduction of foreign atoms into the crystal structure during the synthetic process, which provides an intermediate state in the band gap and transit center for the electron-hole pair, thereby affecting the generation of reactive species by tuning the redox potential and narrowing the band structure, which allows a higher response to the visible light of solar energy [32,44]. However, the doping sites are also the recombination centers for electrons and holes; thus, balance between insertion of the mid-gap in the lattice and the introduction of recombination centers is a concern when applying the doping method [45].…”
Section: Improvement Strategiesmentioning
confidence: 99%