Role of GaAs surface cleaning in plasma deposition of silicon nitride films for encapsulated annealing

Valco, G. J.; Kapoor, Vikram

doi:10.1116/1.573113

Cited by 8 publications

(5 citation statements)

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“…The depth distribution of the nitrogen and silicon in the silicon nitride films was obtained by recording the peak-to-peak height of derivative Auger signals for the NKLL and SiKLL peaks, respectively, as a function of the sputtering time. An Auger depth profile through a 500A plasma deposited silicon nitride film on a GaAs substrate has been recently reported by the authors (12). The composition of each of the films was quite uniform throughout its depth ,both before and after annealing.…”

Section: Methodsmentioning

confidence: 78%

“…High resolution spectra were measured in the vicinities of the As 2p3j2, As 3d, Ga 3d, O ls, and C ls photoelectron peaks. The details of the XPS analysis of cleaning procedures for encapsulated annealing have been previously described by the authors (11,12) and will not be repeated here.…”

Section: Methodsmentioning

confidence: 99%

“…Fluorine contamination of the film-substrate interface can result from the CF4 plasma reactor cleaning procedure as described in detail by the authors in a previous paper (12). Such fluorine contamination was prevented through the use of a modified deposition procedure which included a 300W, 5 min, nitrogen plasma burn followed the CF 4 plasma etch (11,12). The chamber was then baked for 30 rain at the deposition temperature with nitrogen flowing.…”

Section: Methodsmentioning

confidence: 99%

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Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

Valco

Kapoor

1987

J. Electrochem. Soc.

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The composition and annealing characteristics of plasma deposited silicon nitride encapsulating films on ion implanted gallium arsenide have been investigated. X-ray photoelectron spectroscopy was employed to study the surface of the semi-insulating GaAs substrates after cleaning in organic solvents, and HCt, HF, and NH4OH solutions prior to encapsulation. The composition of silicon nitride films deposited with 30 kHz RF excitation was determined through Auger electron spectroscopy and infrared spectroscopy as a function of the deposition conditions. Most of the films had a silicon to nitrogen ratio between 0.71 and 0.76 and a hydrogen concentration between 10 and 19%. GaAs substrates implanted with silicon at 100 keV to a dose of 5 • 1012 cm -2 and annealed at 800~ had peak electron concentrations of 1.7 • 1017 cm -3 at a depth of 0.1 ~m. High frequency encapsulated GaAs substrates implanted at 100 keV to a dose of 5 • 101~ cm -2 and 150 keV to a dose of 3 • 1012 cm -~ had peak electron concentrations of 1.7 • 1017 cm -3 and 9.6 • 101G cm 3 at depths of 0.1 and 0.12 ~tm, respectively. A Schottky-gate field effect transistor with a 3 ~m gate length which was fabricated using the silicon nitride encapsulant had a transconductance of 30 mS/ram.

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Section: Methodsmentioning

confidence: 78%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

Valco

Kapoor

1987

J. Electrochem. Soc.

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“…Surface protection can be achieved through the use of a thin encapsulating layer. Plasma deposited silicon nitride films are of particular interest as they are deposited at low temperatures (6). Among the properties of a good encapsulant are good adhesion to the substrate, resistance to cracking and blistering, and no chemical interaction with the substrate (5).…”

mentioning

confidence: 99%

“…The annealing characteristics, composition and physical properties of the films, and the characteristics of the annealed implant are presented. The effects of the deposition process on the substrate also need to be considered (6,7) and are investigated in this paper. In addition, the composition of the interfacial region between the film and the substrate was studied to assess the extent of chemical interaction between the silicon nitride and the InP.…”

mentioning

confidence: 99%

Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation

Valco

Kapoor

Biedenbender

et al. 1989

J. Electrochem. Soc.

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The composition and annealing characteristics of plasma deposited silicon nitride encapsulating films on ion implanted indium phosphide have been investigate d . X-ray photoelectron spectroscopy was employed to study the surface of InP substrates cleaned with organic solvents and HF or HIO3 solutions prior to encapsulation. The composition of silicon nitride films deposited with 13.56 MHz RF excitation was determined through Auger electron spectroscopy and infrared spectroscopy both before and after annealing. The hydrogen concentration decreased from 21 to 9% during annealing. InP substrates implanted with silicon at 100 keV to a dose of 5 • 1012 cm -2 and 150 keV to a dose of 3 • 1012 cm -2 had activations of approximately 60% after annealing at 700~ X-ray photoelectron spectroscopic measurements were performed at five depths through the silicon nitride/indium phosphide interface of an annealed and an unannealed sample. No chemical interaction between the film and the substrate was observed before or after annealing. However, a change in the composition of the interfacial native oxides upon annealing is suggested from differences between the oxygen peaks for the unannealed and annealed samples.There is considerable interest in the fabrication of devices and integrated circuits on indium phosphide (InP) substrates. This interest primarily derives from the large saturated drift velocity of electrons in InP and from the lower density of surface states at an insulator/InP interface than at an insulator/GaAs interface, which allows the fabrication of accumulation mode metal-insulator-semiconductor devices (1, 2). The thermal instability of InP at temperatures greater than 362~ (3) creates great difficulties for the development of a technology for doping InP through diffusion. Ion implantation, with its benefits of good control and reproducibility and its potential for allowing a planar and possibly self-aligned (4) fabrication technology, is an attractive alternative to diffusion or epitaxy. Since ion implantation disorders the crystal lattice and since the implanted species must be activated, it is necessary to anneal the substrate after implantation. The temperatures at which good implant activation can be achieved are sufficient to cause incongruent evaporation of the surface of the InP substrate (5). Surface protection can be achieved through the use of a thin encapsulating layer. Plasma deposited silicon nitride films are of particular interest as they are deposited at low temperatures (6). Among the properties of a good encapsulant are good adhesion to the substrate, resistance to cracking and blistering, and no chemical interaction with the substrate (5).The ability of a film to meet the adhesion requirements is related to the stress in the film and to the characteristics of the film-substrate interface which will be dependent on the InP cleaning procedure. We present here the results of a study of two procedures for cleaning InP substrates prior to encapsulation with plasma-deposited silicon nitride. The sil...

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Subtractive Etching

Moreau¹

1988

Semiconductor Lithography

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Role of GaAs surface cleaning in plasma deposition of silicon nitride films for encapsulated annealing

Cited by 8 publications

References 0 publications

Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

Plasma Deposited Silicon Nitride for Indium Phosphide Encapsulation

Subtractive Etching

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