2017
DOI: 10.1021/acs.jpcb.7b05885
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Role of Hydrogen and Nitrogen on the Surface Chemical Structure of Bioactive Amorphous Silicon Oxynitride Films

Abstract: Silicon oxynitride (Si-O-N) is a new biomaterial in which its O/N ratio is tunable for variable Si release and its subsequent endocytotic incorporation into native hydroxyapatite for enhanced bone healing. However, the effect of nitrogen and hydrogen bonding on the formation and structure of hydroxyapatite is unclear. This study aims to uncover the roles of H and N in tuning Si-O-N surface bioactivity for hydroxyapatite formation. Conformal Si-O-N films were fabricated by plasma-enhanced chemical vapor deposit… Show more

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Cited by 15 publications
(29 citation statements)
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“…For Ti or PEEK, nanocrystalline HA was confirmed with similar Ca/P ratio as that of as‐fired Si 3 N 4 . Furthermore, the formation of HA structures on the Si 3 N 4 surfaces was similar to that found in prior studies on amorphous silicon nitride (Varanasi et al, ). Combining the results from the SEM, EDS, XRD and Raman spectroscopy analyses, it is reasonable to attribute the enhanced osteoblast growth on the Si 3 N 4 surfaces to the presence of these surface functional groups, relatively dense nanocrystalline HA formation and relatively high surface energy (i.e., low wetting angles).…”
Section: Discussionsupporting
confidence: 87%
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“…For Ti or PEEK, nanocrystalline HA was confirmed with similar Ca/P ratio as that of as‐fired Si 3 N 4 . Furthermore, the formation of HA structures on the Si 3 N 4 surfaces was similar to that found in prior studies on amorphous silicon nitride (Varanasi et al, ). Combining the results from the SEM, EDS, XRD and Raman spectroscopy analyses, it is reasonable to attribute the enhanced osteoblast growth on the Si 3 N 4 surfaces to the presence of these surface functional groups, relatively dense nanocrystalline HA formation and relatively high surface energy (i.e., low wetting angles).…”
Section: Discussionsupporting
confidence: 87%
“…The fluorescence signal (FY) data for Si L2, 3 edge (Figure a) represent the absorption energy of the p core–shell electrons for Si. Peaks a and b at 105.7 and 106.3 represent 2p spin‐orbital splitting, which was described previously (Ilyas et al, ; Varanasi et al, ). These were observed in a shifted state in the as‐fired and polished samples possibly indicating a change in the near‐surface bonding of the Si atom.…”
Section: Resultsmentioning
confidence: 88%
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