Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells

Hou, Yufei; Liang, Feng; Zhao, Degang; Chen, Ping; Yang, Jing; Liu, Zongshun

doi:10.1016/j.jallcom.2021.159851

Cited by 11 publications

(5 citation statements)

References 27 publications

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“…Unlike sample A and sample B, sample C exhibits many spikes in PL spectrum in figure 3(f). In multiple quantum wells, the PL spectra can be modulated by Fabry-Perot fringes, which are caused by multiple reflections of photoluminescence between the sapphire substrate/GaN/ air interfaces[28,30]. Similar results also occurred in the similar multi-quantum well structures in sample C. The numerous oscillations that affect all the PL spectra are due to interference fringes.After that, InGaN film samples were used as photocatalytic anodes for CO 2 reduction under ultraviolet light without a voltage bias.…”

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confidence: 59%

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Improved photocatalytic activity and stability of InGaN quantum dots/C₃N₄ heterojunction photoelectrode for CO₂ reduction and hydrogen production

Zhang¹,

Zhang²,

Yang³

et al. 2021

Nanotechnology

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Photocatalytic conversion of CO 2 to produce fuel is considered a promising approach to reduce CO 2 emissions and tackle energy crisis. GaN-based materials have been studied for CO 2 reduction because of their excellent optical properties and band structure. However, low photocatalytic activity and severe photocorrosion of GaN-based photoelectrode greatly limit their applications. In this work, photocatalytic activity was improved by adopting InGaN quantum dots (QDs) combined with C 3 N 4 nano-sheets as photoanode, and thus the efficiency of CO 2 reduction and the selectivity of hydrogen production were increased significantly. In addition, the photoelectron-chemical corrosion of photoelectrodes has been apparently controlled. InGaN QDs/C 3 N 4 has the highest CO and H 2 productions rates of 14.69 μmol mol −1 h −1 and 140 μmol mol −1 h −1 which were 2.2 times and 14.5 times than that of InGaN film photoelectrode, respectively. The enhancement of photocatalytic activity is attributed to C 3 N 4 modification and a large electric dipole forming on the surface of InGaN QDs, which facilitate the separation and transfer of photo-generated carriers and thus promote CO 2 reduction reaction. This work provides a promising strategy for the development of GaN-based photoanodes with superior stability and efficiency.

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supporting

confidence: 59%

“…In addition, PL spectra are asymmetric rather than a standard Lorenz or Gaussian curve. This may be due to the combined effects of the fluctuations of in composition and thickness in the InGaN layer [28]. The In content can be calculated from PL measurements using below formula [13,29]:…”

Section: Characterizationsmentioning

confidence: 99%

Improved photocatalytic activity and stability of InGaN quantum dots/C₃N₄ heterojunction photoelectrode for CO₂ reduction and hydrogen production

Zhang¹,

Zhang²,

Yang³

et al. 2021

Nanotechnology

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“…3, we can see that as the H2 flow increases from 34.5 sccm to 54.5 sccm, radiation recombination area gradually increases and the distribution becomes more uniform. This means an improvement in crystal quality and uniformity of MQWs and a reduction in micron-scale indium-rich clusters that generate a large number of defects [21], [22]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Liu,

Zhang,

Zhang

et al. 2024

IEEE Photonics J.

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In this study, Green MicroLEDs with different H2 flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H2 flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.

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“…In addition, the periodic structure information of MQWs, such as the interface roughness, can be observed by satellite peaks from the 2θ-ω scanning curves of the (002) plane. 27,28 It shows the change of FWHMs of satellite peak from scanning curves with its order n (n = −3, −2, −1, 0) in Fig. 5.…”

Section: Materials Growth and Characterizationmentioning

confidence: 99%

High-Efficiency InGaN Photo Cell Irradiated by 532 nm Laser with AlGaN Electron Blocking Layer

Shan

Liu

Wang

et al. 2023

ECS J. Solid State Sci. Technol.

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A high-efficiency InGaN photo cell irradiated by 532 nm laser (at green wavelength) with AlGaN electron blocking layer (EBL) is proposed based on the blue-green light window effect of seawater. First, the InGaN/GaN multiple quantum wells (MQWs) structured material intercalated with AlGaN EBL was designed and grown for InGaN photo cells. Then, using atomic force microscopy, X-ray diffraction, and photoluminescence measurements, it was found that the insertion of AlGaN EBL can effectively reduce the defect density and improve the steepness of the interface in the active region. Further, based on these material characteristics, the performance of the InGaN photo cells with AlGaN EBL was evaluated in Silvaco software under 532 nm laser irradiation. The results show that the introduction of AlGaN EBL in InGaN photo cell can not only decrease the non-radiative recombination rates, but also reduce the piezoelectric polarization effect, which contribute to the transport of effective photo-generated carriers and eventually improve the conversion efficiency by 13.325% compared to that with conventional structure. These findings provide critical new insights on high-efficiency GaN-based Photo Cell irradiated by 532 nm laser in the application of underwater communications.

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Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells

Cited by 11 publications

References 27 publications

Improved photocatalytic activity and stability of InGaN quantum dots/C₃N₄ heterojunction photoelectrode for CO₂ reduction and hydrogen production

Improved photocatalytic activity and stability of InGaN quantum dots/C₃N₄ heterojunction photoelectrode for CO₂ reduction and hydrogen production

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

High-Efficiency InGaN Photo Cell Irradiated by 532 nm Laser with AlGaN Electron Blocking Layer

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Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells

Cited by 11 publications

References 27 publications

Improved photocatalytic activity and stability of InGaN quantum dots/C3N4 heterojunction photoelectrode for CO2 reduction and hydrogen production

Improved photocatalytic activity and stability of InGaN quantum dots/C3N4 heterojunction photoelectrode for CO2 reduction and hydrogen production

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

High-Efficiency InGaN Photo Cell Irradiated by 532 nm Laser with AlGaN Electron Blocking Layer

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Product

Resources

About

Improved photocatalytic activity and stability of InGaN quantum dots/C₃N₄ heterojunction photoelectrode for CO₂ reduction and hydrogen production

Improved photocatalytic activity and stability of InGaN quantum dots/C₃N₄ heterojunction photoelectrode for CO₂ reduction and hydrogen production