2005 International Semiconductor Device Research Symposium
DOI: 10.1109/isdrs.2005.1596047
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Role of Low O/sub 2/ Pressure and Growth Temperature on Electrical Transport of PLD Grown ZnO Thin Films on Si Substrates

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“…5 shows the grain size of untreated and plasma nitrided samples as a function of treatment time at a filling pressure of 2 and 3 mbar of reflection (1 1 0). It can be observed that the grain size of nitrided samples increases with pressure (Pandis et al, 2006), whereas, it decreases in comparison with the grain size of untreated sample with nitriding time owing to the diffusion of nitrogen atoms causing the peak broadening due to variation of d-spacing (Badawi et al, 2000;Aouadi et al, 2005). …”
Section: X-ray Diffraction Measurements (Xrd)mentioning
confidence: 96%
“…5 shows the grain size of untreated and plasma nitrided samples as a function of treatment time at a filling pressure of 2 and 3 mbar of reflection (1 1 0). It can be observed that the grain size of nitrided samples increases with pressure (Pandis et al, 2006), whereas, it decreases in comparison with the grain size of untreated sample with nitriding time owing to the diffusion of nitrogen atoms causing the peak broadening due to variation of d-spacing (Badawi et al, 2000;Aouadi et al, 2005). …”
Section: X-ray Diffraction Measurements (Xrd)mentioning
confidence: 96%