2011
DOI: 10.1021/cr100142w
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Role of Molecular Order and Solid-State Structure in Organic Field-Effect Transistors

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Cited by 513 publications
(468 citation statements)
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“…DB-TTF is known to exhibit a complex polymorphism scenario, where four polymorphs have already been identified. [30][31][32] Previous works reported single crystal OFETs based on the most favorable thermodynamically α-phase, while on thin films the kinetically more favorable γ−phase is usually found. Accordingly, here also in both the evaporated and solution casted films, it was observed that the crystals formed belong to such γ−phase (Fig.1b).…”
Section: Resultsmentioning
confidence: 99%
“…DB-TTF is known to exhibit a complex polymorphism scenario, where four polymorphs have already been identified. [30][31][32] Previous works reported single crystal OFETs based on the most favorable thermodynamically α-phase, while on thin films the kinetically more favorable γ−phase is usually found. Accordingly, here also in both the evaporated and solution casted films, it was observed that the crystals formed belong to such γ−phase (Fig.1b).…”
Section: Resultsmentioning
confidence: 99%
“…We remark that molecular order at the nanoscale is revealed of utmost importance. 14,17 Hexabenzocoronene is known to form discotic liquid-crystalline materials with molecules uniaxially oriented along the transport direction with field-effect mobilities reaching 0.01 cm 2 V −1 s −1 . 18,19 However, the substitution pattern followed here may also bring additional non-covalent through-space interactions, 20,21 complementarily to π · · ·π and C−H· · ·π interactions largely found in acene-based materials, which also deserve to be closely investigated by theoretical methods.…”
Section: Introductionmentioning
confidence: 99%
“…S4). 22,24,25 The hole mobility of the OFET without the SD-PARA layer was almost similar for both the forward and backward direction sweeps, whereas the PEW-OFET exhibited an almost one order of magnitude lower hole mobility for the backward direction sweep than for the forward direction sweep (see Supplementary Figure S5). This large change in the hole mobility for the PEW-OFET reflects the different charged states in the SD-PARA layer upon sweeping the gate voltages in the forward and backward directions.…”
Section: Resultsmentioning
confidence: 98%