Role of Network Topology on the Vibrational Lifetime of an<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">H</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>O Molecule in the Ge-As-Se Glass Series

Uebbing, B.; Aj, Sievers

doi:10.1103/physrevlett.76.932

Cited by 22 publications

(8 citation statements)

References 17 publications

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“…The chalcogenide glasses of the type Ge-͑As͒-Se are a physical realization of rigidity percolation problem because of the weakness of the energy associated with the dihedral angle. [20][21][22][23][24][25] In our experiment, the spectral dimensionality of the bending fractons extends to ͗r͘ϭ2.44, which gives a similar result to Boolchand and co-worker's claim. 22 They claimed that the rigidity threshold in Ge-Se glasses occurs at ͗r͘ ϭ2.46.…”

Section: ͑4͒supporting

confidence: 87%

“…22 They claimed that the rigidity threshold in Ge-Se glasses occurs at ͗r͘ ϭ2.46. However, Wang et al 23 and Taniguchi et al 24 Recently, Phillips discussed the relation between ␤/␣ ratio and the constraint theory of network glass 26 to explain the Uebbing and Sievers' data 25 for the relaxation rate ␥ of the H 2 O symmetrical stretching mode. For ͗r͘Ͼ2.4, ␤ bending constraints have been replaced by ␣ stretching constraints, which causes an increase in the concentration of the ␣ localized mode.…”

Section: ͑4͒mentioning

confidence: 99%

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Relation of structural and elastic crossover length investigated by low-frequency Raman scattering inGexSe1−xglass

Nakamura¹,

Matsuda²,

Murase³

1998

Phys. Rev. B

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Low-frequency Raman spectra ͑10 cm Ϫ1 -80 cm Ϫ1 ) have been studied in the Ge x Se 1Ϫx (0.02рxр0.40) glasses. The Raman spectra reduced by the Bose factor I R (), which are proportional to the vibrational density of states, show a power-law dependence of the frequency, , g()ϰ dϪ1 in a low-frequency region. The value d is a noninteger, which suggests that these glassy systems have fractal structures. The spectra I R () of Se-rich samples are classified into three regions whose vibrational properties are due to acoustic phonons, bending fractons, and stretching fractons, whereas that of the Ge-rich samples' two regions are due to acoustic phonons and stretching fractons. The difference of two types of these low-frequency properties are explained by correlation of the structural crossover length and the elastic crossover length l c . The threshold of these phenomena occurs near ͗r͘ϳ2.4, which may be related to the prediction of the Phillips-Thorpe constraint theory.

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Section: ͑4͒supporting

confidence: 87%

Section: ͑4͒mentioning

confidence: 99%

Relation of structural and elastic crossover length investigated by low-frequency Raman scattering inGexSe1−xglass

Nakamura¹,

Matsuda²,

Murase³

1998

Phys. Rev. B

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“…The interplay between network topology and macroscopic properties in network glass formers ( 53 ), and more specifically in chalcogenide network glasses ( 54 , 55 ), has been well addressed in the context of RP ( 18 ). Attempts have been made to reconcile RP with isotropic jamming ( 21 ), yet such a connection has been evasive.…”

Section: Discussionmentioning

confidence: 99%

Emergence of rigidity percolation in flowing granular systems

Dashti,

Saberi,

Rahbari

et al. 2023

Sci. Adv.

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Jammed granular media and glasses exhibit spatial long-range correlations as a result of mechanical equilibrium. However, the existence of such correlations in the flowing matter, where the mechanical equilibrium is unattainable, has remained elusive. Here, we investigate this problem in the context of the percolation of interparticle forces in flowing granular media. We find that the flow rate introduces an effective long-range correlation, which plays the role of a relevant perturbation giving rise to a spectrum of varying exponents on a critical line as a function of the flow rate. Our numerical simulations along with analytical arguments predict a crossover flow rate γ ˙ c ≃ 1 0 − 5 below which the effect of induced disorder is weak and the universality of the force chain structure is shown to be given by the standard rigidity percolation. We also find a power-law behavior for the critical exponents with the flow rate γ ˙ > γ ˙ c .

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“…These inelastic interactions of an oscillator with the low-frequency modes result in energy relaxation times that are typically hundreds of femtoseconds to hundreds of picoseconds in solids. [5][6][7][8][9][10] The energy relaxation lifetime most often cannot be derived from the linewidth of the linear absorption spectrum. 11,12 This is due to the fact that generally elastic interactions leading to dephasing of the vibrational transition and the associated line broadening ͑pure dephasing͒ occur on even shorter time scales.…”

Section: Introductionmentioning

confidence: 99%

Vibrational lifetimes of hydrogen in silicon

Lüpke

Tolk

Feldman

2003

Journal of Applied Physics

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Characterization of defect and impurity reactions, dissociation, and migration in semiconductors requires a detailed understanding of the rates and pathways of vibrational energy flow, of the energy transfer channels, and of the coupling mechanisms between local modes and the phonon bath of the host material. Significant progress in reaching this goal has been accomplished in recent landmark studies exploring the excitation and dynamics of vibrational states associated with hydrogen in silicon. The lifetime of the Si-H stretch mode is found to be extremely dependent on the local solid-state structure, ranging from picoseconds for interstitial-like hydrogen, hundreds of picoseconds for hydrogen-vacancy complexes, to several nanoseconds for hydrogen bonded to Si surfaces-over three orders of magnitude variation. Such large variations in lifetime ͑transition probability͒ are extraordinarily rare in solid-state science. The level of theoretical investigation into the vibrational lifetime of the Si-H oscillator is less advanced. This state of affairs is partly because of the difficulties in explicitly treating slow relaxation processes in complex systems, and partly because, as suggested by experiment, a highly anharmonic coupling mechanism is apparently responsible for the ͑multiphonon͒ relaxation process. Even more importantly, because of the high frequency of the Si-H stretching motion, a quantum mechanical treatment of the Si-H oscillator is required. A combination of Bloch-Redfield theory and molecular dynamics simulation seems promising in describing the relaxation process of the Si-H vibrational modes. It is the aim of this review article to present a comprehensive overview of the recent accomplishments, current understandings, and future directions in this emerging field of time-resolved vibrational spectroscopy of point defects in solids.

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Role of Network Topology on the Vibrational Lifetime of anH2O Molecule in the Ge-As-Se Glass Series

Cited by 22 publications

References 17 publications

Relation of structural and elastic crossover length investigated by low-frequency Raman scattering inGexSe1−xglass

Relation of structural and elastic crossover length investigated by low-frequency Raman scattering inGexSe1−xglass

Emergence of rigidity percolation in flowing granular systems

Vibrational lifetimes of hydrogen in silicon

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