Role of nonlinear effects in nanowire growth and crystal phase

Dubrovskiı̆, V. G.; Sibirev, N. V.; Cirlin, G. É.; Bouravleuv, A. D.; Samsonenko, Yu. B.; Dheeraj, Dasa L.; Zhou, Hailong; Sartel, Corinne; Harmand, J. C.; Patriarche, G.; Glas, Frank

doi:10.1103/physrevb.80.205305

Cited by 97 publications

(140 citation statements)

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“…The observation of such lines in the range 1.75 -1.95 eV with an irregular distribution can be explained taking into account the effect of the crystalline phase transition which is known to exist in such nano-wires [ [16][17][18]. Namely in the AlGaAs nano-wire the crystalline structure can switch spontaneously from the zinc-blende (ZB) to the hexagonal wurtzite (WZ) structure.…”

Section: Resultsmentioning

confidence: 99%

Optical study of GaAs quantum dots embedded into AlGaAs nanowires

Kats¹,

Кочерешко²,

Platonov³

et al. 2011

Semicond. Sci. Technol.

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We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nanowires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the AlGaAs nanowires.

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Section: Resultsmentioning

confidence: 99%

Optical study of GaAs quantum dots embedded into AlGaAs nanowires

Kats¹,

Кочерешко²,

Platonov³

et al. 2011

Semicond. Sci. Technol.

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“…[21][22][23][24][25][26][27] For example, as demonstrated in Refs. 21 and 22 in the case of Au-assisted molecular beam epitaxy ͑MBE͒ of GaAs NWs on the GaAs substrates, intelligent manipulations of the growth conditions permit continuously low supersaturation in the vicinity of growing NWs and, consequently, the stacking-fault-free ZB structure.…”

Section: Introductionmentioning

confidence: 99%

Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

et al. 2010

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(2010) 'Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires directly on Si͑111͒ substrates. The growth is catalyzed by liquid Ga droplets formed in the openings of a native oxide layer at the initial growth stage. Transmission electron microscopy studies demonstrate that the nanowires are single crystals having the zincblende structure along their length ͑apart from a thin wurtzite region directly below the Ga droplet͒, regardless of their diameter ͑70-80 nm͒ and the growth temperature range ͑560-630°C͒. We attribute the observed phase purity to a much lower surface energy of liquid Ga than that of Au-Ga alloys, which makes triple line nucleation energetically unfavorable. The change in growth catalyst to a liquid metal with a lower energy suppresses the ͑more usual͒ formation of wurtzite nuclei on surface energetic grounds. These results can provide a distinct method for the fabrication of chemically pure and stacking-fault-free zincblende nanowires of III-V compounds on silicon.

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“…[17], we would expect WZ to be associated with higher supersaturation and hence to higher growth rate, the reverse of what is observed here. Nevertheless, this does not rule out a change of supersaturation as a possible explanation, since a more complete analysis of the growth kinetics suggests that WZ growth actually takes place in an intermediate range of supersaturation, ZB being favored at low supersaturation but also at high supersaturation [18]. In this case, it could be argued that at the transition, supersaturation was reduced (for instance due to a loss of Ga).…”

Section: Resultsmentioning

confidence: 90%