Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition

Pomaska, Manuel; Mock, J. B.; Köhler, Florian; Zastrow, U.; Perani, Martina; Astakhov, Oleksandr; Cavalcoli, Daniela; Carius, R.; Finger, F.; Ding, Kaining

doi:10.1063/1.4971402

Cited by 9 publications

(6 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results corroborate with the RBS analysis presented in Figure 1a. In addition, Pomaska et al presented studies on the unintentional doping by oxygen contamination where they demonstrated that the oxygen incorporation was influenced the microstructural, electronic, and optical properties of the SiC films [39]. It has been shown that oxygen incorporation during film deposition increases the crystallinity of SiC films, consistent with findings observed in this work.…”

Section: Resultssupporting

confidence: 87%

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

et al. 2019

View full text Add to dashboard Cite

Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to the importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of an aluminum nitride (AlN) intermediate layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, SiC films were also grown on Si substrates. A comparison of the structural and chemical properties of SiC thin films grown on the two types of substrate allowed us to evaluate the influence of the AlN layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of the HiPIMS technique to produce polycrystalline SiC thin films at near-room temperature by only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with good structural quality using an AlN intermediate layer.

show abstract

Section: Resultssupporting

confidence: 87%

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Among various ways available, ion-beam implantation is a very reliable and popular technique to incorporate impurities in a host lattice [1][2][3] as it provides controllable selective area doping in the target materials [4]. The most widely used implanted defects in semiconductors include P, B, As [5][6][7][8][9] and Si + [10,11] implanted thermal oxide films on crystalline Si for photoluminiscence, modified refractive index and optical waveguides, O and N in SiC [12], P [13], B [14], Si [15][16][17] and Er [18,19] in SiO 2 , Au [20], Cu [21] in SiO 2 , Pd in Si [22] and As in GaAs [23] for tuning optical and physical properties. Doped rock-salt oxides (for example MgO) have been studied extensively [24][25][26][27][28][29][30][31][32][33][34][35] for their applications in optical and magnetic sensors, switching devices and as dilute magnetic semiconductors [36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Prediction of Site Preference of Implanted Transition Metal Dopants in Rock-salt Oxides

Misra

Yadav

2019

Sci Rep

View full text Add to dashboard Cite

Transition metals (TMs) implanted in oxides with rock-salt crystal structures (for example MgO and BaO) are assumed to substitute cations (Mg in case of MgO) from the lattice sites. We show that not all implanted TMs substitute cations but can be stable in interstitial sites as well. Stability of TM (Sc–Zn) dopants in various charge states in MgO and BaO has been investigated in the framework of density functional theory. We propose an effective way to calculate stability of implanted metals that let us predict site preference (interstitial or substitution) of the dopant in the host. We find that two factors govern the preference for an interstitial site: (i) relative ionic radius and (ii) relative oxygen affinity of cation and the TM dopants. If the radius of the cation is much larger than TM dopant, as in BaO, TM atoms always sit at interstitial sites. On the other hand, if the radius of the cation is comparable to that of the dopant TM, as in case of MgO, the transition of the preferred defect site, from substituting lattice Mg atom (Sc to Mn) to occupying interstitial site (Fe to Zn) is observed. This transition can be attributed to the change in the oxygen affinity of the TM atoms from Sc to Zn. Our results also explain experiments on Ni and Fe atoms implanted in MgO. TM dopants at interstitial sites could show substantially different and new properties from substitutionally doped stable compounds.

show abstract

“…Kultayeva et al 27 reported a difference of four orders of magnitude in the electrical resistivity of N 2 -doped (2.1 × 10 -1 Ω.cm) and undoped (1.2 × 10 3 Ω⋅cm) SiC at the same porosity of 62%. In addition to N 2 , 122-126 O 2 , 126,127 Al, [128][129][130][131] B, 131,132 V, 133,134 Be, 131 Ga, 122 Sc, 135,136 P, 123,124,137 C, 127 etc. are soluble in the SiC lattice.…”

Section: Doping Of Soluble Atomsmentioning

confidence: 99%

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Anwar

Bukhari

et al. 2022

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

Porous silicon carbide (SiC)‐based ceramics are widely used in numerous applications of technical importance owing to their exceptional structural (e.g., excellent chemical, mechanical, and thermal stability) and functional (e.g., controlled electrical resistivity) properties. Porous SiC with controlled electrical resistivity is required for various advanced applications, for example, power electronic devices, semiconductor processing parts, fusion reactors, thermoelectric energy conversion, electromagnetic shielding, and environmental applications such as heatable filters. The electrical properties of sintered porous SiC are significantly affected by its chemical composition, processing conditions, and microstructure. This article reviews the influence of certain critical factors, such as the polytype, doping conditions, porosity (%), additive composition (oxide additives, element additives, metal nitride/carbide additives, etc.), and processing conditions on the electrical resistivity of porous SiC. Novel applications of porous SiC with controlled electrical resistivity are also discussed in this review.

show abstract

Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition

Cited by 9 publications

References 30 publications

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

Prediction of Site Preference of Implanted Transition Metal Dopants in Rock-salt Oxides

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Contact Info

Product

Resources

About