Role of oxygen content on the transport and magnetic properties of La1−xCaxMnO3+δ manganites

Malavasi, Lorenzo; Mozzati, Maria Cristina; Azzoni, C. B.; Chiodelli, Gaetano; Flor, Giorgio

doi:10.1016/s0038-1098(02)00376-9

Cited by 83 publications

(84 citation statements)

References 16 publications

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“…In absence of magnetic field, both the samples LSMO and LCMO show broad humps corresponding to M-I transitions at temperatures 273.0 K and 201.6 K respectively. With the application of 1 Tesla magnetic field, resistivity of both the samples decreases whereas M-I transition temperature increases towards higher values 280.5 K and 203.2 K respectively, as also reported by many other researchers [9][10][11][12]. MR is defined as…”

Section: Labview Applicationsupporting

confidence: 53%

Measurement and Analysis of Temperature Dependent Resistance of La0.67Ca/Sr0.33MnO3 CMR Samples Using LabVIEW

Keshri¹,

Joshi²,

Mukherjee³

et al. 2010

JEMAA

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Section: Labview Applicationsupporting

confidence: 53%

Measurement and Analysis of Temperature Dependent Resistance of La0.67Ca/Sr0.33MnO3 CMR Samples Using LabVIEW

Keshri¹,

Joshi²,

Mukherjee³

et al. 2010

JEMAA

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“…The phenomenon that mass enhanced with substituting ion can be interpreted as follows: substitution stimulate manganese content and these Mn 4? ions induced an increase in bending of Mn-O-Mn bond angle, in this manner narrowing band width and enhancing the effective mass [68]. We notice that enhanced electron mass m * = 2.031 (2.514) m e in La 0.7 Ca 0.3-x K x MnO 3 leads to the reduced plasma frequency, and hence the reduced zero temperature elastic scattering rate in comparison to conventional metals.…”

Section: Discussion and Analysis Of Resultsmentioning

confidence: 77%

Metallic and semi-conducting resistivity behaviour of La0.7Ca0.3−x K x MnO3 (x = 0.05, 0.1) manganites

Varshney

Dodiya

2014

J Theor Appl Phys

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The temperature dependence of electrical resistivity, q, of ceramic La 0.7 Ca 0.3-x K x MnO 3 (x = 0.05, 0.1) is investigated in metallic and semi-conducting phase. The metallic resistivity is attributed to be caused by electron-phonon, electron-electron and electron-magnon scattering. Substitutions affect average mass and ionic radii of A-site resulting in an increase in Debye temperature h D attributed to hardening of lattice with K doping. The optical phonon modes shift gradually to lower mode frequencies leading to phonon softening. Estimated resistivity compared with reported metallic resistivity, accordingly q diff. = [q exp. -{q 0 ? q e-ph (=q ac ? q op )}], infers electron-electron and electron-magnon dependence over most of the temperature range. Semi-conducting nature is discussed with variable range hopping and small polaron conduction model. The decrease in activation energies and increase in density of states at the Fermi level with enhanced Ca doping is consistently explained by cationic disorder and Mn valence.

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“…Furthermore, intercalation or desorption of only a few atomic percent of hydrogen or oxygen into/from VO 2 dramatically changes its transport properties, equivalent to the changes caused by inducing the MIT. [10][11][12][13][14][15][16] Conventionally, the amount of hydrogen ions (H + )/oxygen ions (O 2 ) in an oxide has been controlled by annealing the sample under redox gas atmosphere, 11,12,17,18 in aqueous solution 13,14 or with a hydrogen spillover method. 10,15 All of these methods require a high temperature of at least 150 • C. Recently, electric fields have been used for both hydrogenation and oxidation of oxides at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Research Update: Nanoscale electrochemical transistors in correlated oxides

Kanki

Tanaka

2017

APL Materials

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Large reversible changes of the electronic transport properties of solid-state oxide materials induced by electrochemical fields have received much attention as a new research avenue in iontronics. In this research update, dramatic transport changes in vanadium dioxide (VO2) nanowires were demonstrated by electric field-induced hydrogenation at room temperature through the nanogaps separated by humid air in a field-effect transistor structure with planar-type gates. This unique structure allowed us to investigate hydrogen intercalation and diffusion behavior in VO2 channels with respect to both time and space. Our results will contribute to further strategic researches to examine fundamental chemical and physical properties of devices and develop iontronic applications, as well as offering new directions to explore emerging functions for sensing, energy, and neuromorphologic devices combining ionic and electronic behaviors in solid-state materials.

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Role of oxygen content on the transport and magnetic properties of La1−xCaxMnO3+δ manganites

Cited by 83 publications

References 16 publications

Measurement and Analysis of Temperature Dependent Resistance of La0.67Ca/Sr0.33MnO3 CMR Samples Using LabVIEW

Measurement and Analysis of Temperature Dependent Resistance of La0.67Ca/Sr0.33MnO3 CMR Samples Using LabVIEW

Metallic and semi-conducting resistivity behaviour of La0.7Ca0.3−x K x MnO3 (x = 0.05, 0.1) manganites

Research Update: Nanoscale electrochemical transistors in correlated oxides

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