Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth

Woods, J.; Ainslie, N. G.

doi:10.1063/1.1729602

Cited by 63 publications

(12 citation statements)

References 5 publications

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“…Four crystals 139,140,and 141 in Table I) were grown from the melt doped intentionally with Si at concentration [Si]mdt = 1 X 10 18 crn 3 for HB-138 and 140, and [Silmelt = 1 X 10 19 cm--3 for HB-139 and 141. These concentrations exceed the contamination level brought about by the decomposition of the quartz ampule (reaction 1).…”

Section: Co Effects Of Vanadium On Heavily Si-doped Crystaismentioning

confidence: 99%

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Łagowski

Gatos

1989

Journal of Applied Physics

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Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, we were able to grow reproducibly semiinsulating GaAs by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shall~w donors below the concentration of acceptors. The present findings clarify the longstandmg controversy on the role of V in achieving semi-insulating GaAs.

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Section: Co Effects Of Vanadium On Heavily Si-doped Crystaismentioning

confidence: 99%

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Łagowski

Gatos

1989

Journal of Applied Physics

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“…When the donor level is regarded as a singleimpurity level, the activation energy of the dopant was calculated from the charge neutrality condition taking residual acceptors into consideration. In the charge neutrality equation for the n-type semiconductor, E D , N D , and N A are related through the equation 11,[17][18][19][20] n e ðn e þ N A Þ…”

Section: Resultsmentioning

confidence: 99%

“…where N C is the effective density of states in the conduction band, k is the Boltzmann constant, T is the temperature, m Ã e is 22) From this case, the donor activation energy (E D ) and E A should be described as [17][18][19]23,24) …”

Section: Resultsmentioning

confidence: 99%

Electrical properties of n-type AlGaN with high Si concentration

Takeda

Iwaya

Takeuchi

et al. 2016

Jpn. J. Appl. Phys.

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The electrical properties of Si-doped AlGaN layers (AlN molar fractions: 0.03-0.06) with the donor concentrations (N D ) from 8.8 ' 10 17 to 4.5 ' 10 20 cm %3 were investigated by variable-temperature Hall effect measurement using the van der Pauw method. A minimum resistivity of 3.6 ' 10 %4 Ω cm was obtained for Si-doped AlGaN with a smooth surface at room temperature. We found that the activation energy of the Si donor is affected by the Coulomb interaction in the AlGaN layer with N D values from 8.8 ' 10 17 to 2.5 ' 10 20 cm %3 . In several AlGaN layers, the freeelectron concentration did not vary with sample temperature, as expected in the case of degeneracy. The localization of GaN in the AlGaN layer was speculated as a cause of degeneracy of samples.

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“…However, in contrast to its demonstrated usefulness, the major role of Si in these compounds is that of an unintentional contaminant arising from the frequent use of fused silica crystal growing apparatus. In particular, the electrical properties of melt-grown boules of GaAs have been analyzed by assuming that Si is the dominant residual impurity (3).…”

mentioning

confidence: 99%

“…Substituting Eq [2]. and[3] into Eq [1]. the resulting equation at any liquidus temperature is linear in five unknown parameters which define the i.c.e.'s.…”

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confidence: 99%

Calculation of the Liquidus Isotherms and Component Activities in the Ga-As-Si and Ga-P-Si Ternary Systems

Jordan¹,

Weiner²

1974

J. Electrochem. Soc.

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Liquidus isotherms and thermodynamic activities have been calculated for the Ga-As-Si and Ga-P-Si ternary systems. The calculations are based on the assumption that the activities of the components in the liquid phase can be represented with sufficient accuracy by the ternary regular solution model. A least square analysis of the liquidus data for Si-doped GaAs yields the three ternary interchange energies (i.c.e.'s). These are then used to construct the liquidus isotherms for Si-doped GaAs, Ga-and As-doped Si, and the ternary eutectic valley, all of which are in excellent agreement with the experimental results over a wide temperature and composition range. The ternary Ga-As and Ga-Si i.c.e.'s are in very good accord with the i.c.e.'s derived from the binary data but a similar test for the Si-As i.c.e, shows a less satisfactory agreement. As the Ga-P-Si system has not yet been investigated, the calculations presented here are based solely on binary data and they need experimental confirmation. The implications of these results to crystal growth and the limitations of the regular solution model in the vicinity of the compound composition SiAs are also discussed.

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Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth

Cited by 63 publications

References 5 publications

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Electrical properties of n-type AlGaN with high Si concentration

Calculation of the Liquidus Isotherms and Component Activities in the Ga-As-Si and Ga-P-Si Ternary Systems

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