“…The report of RTFM in Co doped TiO2 films has obviously encouraged experimental studies [14] . Since then, intense research efforts have followed on these to realize robust RTFM in doped oxide materials and many wide-band-gap oxides, such as ZnO [13,[15][16][17][18][19][20] , TiO2 [14,[21][22][23][24] , SnO2 [25][26][27][28][29] , In2O3 [30][31][32][33][34] , SrTiO3 [35][36][37][38] , etc. People understood that the RTFM resulted from the interaction between the dopant moments and carrier spins with different theoretical models such as RKKY [39,40] , mean field theory [13,41,42] , or double exchange [43,44] etc., and considered that doping played a key role in the RTFM of DMOs [45] .…”