Role of passivation etch polymers in interfacial delamination for polymeric low-<i>k</i> dielectrics

Breen, Mark; Foster, C. M.; Bass, Shailer L.; Lee, J. J.; Mlynko, W.

doi:10.1116/1.591380

Cited by 9 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another issue about etching Damascene with a high aspect ratio was that etching reactant gases must provide the passivation effect on sidewall surfaces for an increased anisotropic etching rate. 13,14 Breen et al 15 proposed that addition of polymerizing components to the etch chemistry could suppress the isotropic component. The undesired polymer residues might become more difficult to remove since the addition of reaction gases generally consisted of carbonfluorine-hydrogen-based gases (C x F y , CH x F, C x H y ) and their chemical features are very similar to underlayer low-K materials.…”

Section: Introductionmentioning

confidence: 99%

“…The undesired polymer residues might become more difficult to remove since the addition of reaction gases generally consisted of carbonfluorine-hydrogen-based gases (C x F y , CH x F, C x H y ) and their chemical features are very similar to underlayer low-K materials. 15 For the low-dielectric material, a-C:F, in which we are interested contents of carbon and fluorine existed in the materials. Here, we examine the etching recipe, combining a mix of gases of chemical etch gas ͑such as oxygen͒, diluted in the bombarded etch gas nitrogen gas.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

Shieh

Suen

Tsai

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Fluorinated amorphous carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition with low dielectric constant (K∼2.3), thermal stability (higher than 400 °C) and acceptable adhesion to a cap layer such as SiOF or SiO2 were obtained by varying the range of content ratios between carbon and fluorine, the rf power, the process pressure and the base temperature. Standard x-ray photoelectron spectroscopy and thermal desorption spectroscopy metrologies were employed to characterize the deposited a-C:F films. The damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2) was implemented by a mixture of etching gases of N2+O2. The bias power, rf power and gas flows were incorporated to optimize the etching recipe for achieving a damascene profile with a high aspect ratio. The scanning electron microscope results showed that a better etch profile can be obtained at higher bias power. In our damascene architecture, the etching stop layer or hard mask of both SiOF and SiO2 was studied. The SiOF, providing a lower dielectric constant than SiO2, would especially reduce the entire effective dielectric constant. Furthermore, we integrated electroplated copper into trenches or vias as small as 0.15 μm, with aspect ratio of 6.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

Shieh

Suen

Tsai

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…5 Fluorocarbon etch residual has been correlated with delamination of polymeric low K dielectric thin film. 6 Although oxygen plasma based de-scum process has been used in mitigating gross resist scum, very thin resist scum layers at 10 nm or thinner can be difficult to detect but still cause process issues in the most advanced semiconductor fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

TOFSIMS Characterization of Molecular Contamination Induced Resist Scumming

Lee¹,

Guenther²,

Brownson³

et al. 2003

AIP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

In conventional semiconductor processes, gross photoresist scum has been detected with inspections using optical microscope or secondary electron microscope; trace molecular contamination or photoresist residue could be removed during wafer processes employing vigorous thermal, chemical, plasma or ion beam steps and thus had negligible effects on semiconductor manufacture. However, advanced semiconductor technology has become increasingly sensitive to molecular contamination that might be difficult to detect with traditional inspection and analysis techniques. Direct surface analysis by TOFSIMS provides sensitive detection of both elemental and molecular contamination that may be originated from environmental sources or from wafer fabrication processes. Monolayer level molecular contamination and very thin photoresist scum that were not detectable with conventional inspection techniques have been characterized with TOFSIMS in this paper. Detrimental effects of the very thin photoresist scum have been demonstrated with a 130 nm technology process. Cleaning process to remove molecular contamination was validated with TOFSIMS analysis. Detection of very thin photoresist scum can be accomplished with TOFSIMS imaging analysis.

show abstract

“…Many have observed the CMP-induced delamination, 5,6 and solutions based on experiments have been proposed to prevent the CMP-induced delamination. The most representative solutions are as follows: high mechanical integrity of the ULK, high bonding strength between the ULK and the other layers, and a lower applied pressure during CMP.…”

mentioning

confidence: 99%

Analysis on Delamination Phenomena for Nonpatterned Wafers during Abrasive-Free CMP by Finite Element Simulation

Kim

2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

This paper analyzes the delamination phenomena for nonpatterned Cu/ultralow-K ͑ULK͒ wafers during abrasive-free chemical mechanical polishing ͑CMP͒ by finite element ͑FE͒ analysis. The objectives of this study are as follows: to find the major cause and major parameter of the CMP-induced delamination and to suggest better conditions to prevent the CMP-induced delamination. Through the FE analysis, we found that the maximum principal stress within the cap layer was the critical stress for the CMP-induced delamination. This means that the failure such as fracture of the cap layer incurs the CMP-induced delamination. Through the parametric study, we also found that the maximum principal stress within the cap layer is very sensitive to the modulus of the cap layer and the modulus of ULK.

show abstract

Role of passivation etch polymers in interfacial delamination for polymeric low-k dielectrics

Cited by 9 publications

References 11 publications

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

TOFSIMS Characterization of Molecular Contamination Induced Resist Scumming

Analysis on Delamination Phenomena for Nonpatterned Wafers during Abrasive-Free CMP by Finite Element Simulation

Contact Info

Product

Resources

About