Inorganic metal halide perovskites with intrinsically good thermal stability are potential candidates for stable perovskite solar cells (PSCs). However, band misalignment between perovskite absorber and hole-transport material (HTM) restricts the maximum attainable photovoltage and power conversion efficiency. In addition, widely used HTM 2,2′,7,7′-tetrakis[N,N-di(4methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro) in the fabrication of highly efficient inorganic PSCs causes stability issue. Here, we report a facial way to deposit an in situ formed NiO x interlayer at low temperature between perovskite and Spiro in inorganic PSCs with an n−i−p configuration. Our results suggest that devices with the NiO x interlayer have better energy alignment and facilitate hole extraction and transfer more efficiently than those without NiO x . This leads to a 100 mV improvement in the opencircuit voltage (V OC ) and obtaining an excellent PCE of 13.6%, along with improved stability. This work provides a simple strategy to mitigate the V OC loss for efficient and stable inorganic perovskite devices.