TiO 2 has been recognized as a promising material for a wide range of emerging applications, including hydrogen generation, [1] CO 2 reduction, [2] degradation of organic pollutants, [3] self-cleaning coating, [4] quantum-dot-sensitized solar cells, [5] dyesensitized solar cells (DSSCs), [6] and more recently perovskite solar cells (PSCs). [7,8] Thermal annealing is a critical process involved in the fabrication of TiO 2 films for PSCs. For instance, a compact TiO 2 film that acts as an electron transport layer (ETL) for PSCs usually requires an annealing temperature of over 400 C to induce the crystallization from its amorphous precursor to anatase. [9,10] The fabrication of the mesoporous TiO 2 film for mesoscopic PSCs also needs high-temperature sintering of around 450-550 C to remove organic binders from TiO 2 paste and promote the interconnection between the TiO 2 nanoparticles. [11,12] A typical conventional annealing method is a time-consuming batch process involving the uses of a hotplate, furnace, or oven, for 1-3 h to fabricate these layers, including a long cooling period. [12-14] Such a process makes it challenging to develop high throughput or in-line production of PSCs. Therefore, there is a need to develop an alternative annealing method, enabling the rapid and scalable production of high-quality metal oxide films for PSCs for future commercialization. In addition, conventional annealing methods are commonly limited to below 550 C to avoid glass substrate bending or breakage due to a glass transition temperature of 564 C for substrate based on soda-lime glass. [15] Previous studies have suggested that an annealing temperature beyond 600 C enhances the crystallinity of the TiO 2 films and interconnection between the nanoparticles, which improves the performance of the PSCs and other devices. [13,16-18] To date, several alternative annealing methods have been developed to fabricate TiO 2 ETL for PSCs and DSSCs. For instance, Watson et al. demonstrated the use of an ultrafast near-IR (NIR) heating process to sinter mesoporous TiO 2 film on metal substrates for DSSCs. [19] Sánchez et al. developed a rapid flash IR method to anneal mesoporous TiO 2 film for PSCs with a peak temperature of %640 C and achieved a production rate of 15 cm 2 min À1 (1 cm 2 in 4 s). [11] Kim et al. demonstrated a flame annealing process to anneal the TiO 2 film for PSCs and DSSCs with a peak temperature up to 1000 C and