2012
DOI: 10.1016/j.apsusc.2012.03.121
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Role of pH of precursor solution in taming the material properties of spray pyrolysed SnS thin films

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Cited by 36 publications
(11 citation statements)
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“…Figure 3a shows the samples prepared at 0.1-Pa formed polycrystalline needles. This type of formation was also observed by Sajeesh [22] for SnS thin films prepared by a chemical spray pyrolysis technique. As shown in figure 3b, SEM characterization of the film deposited at 0.15 Pa pressure revealed petal-shaped particles containing no pores and voids [30].…”
Section: Surface Analysissupporting
confidence: 79%
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“…Figure 3a shows the samples prepared at 0.1-Pa formed polycrystalline needles. This type of formation was also observed by Sajeesh [22] for SnS thin films prepared by a chemical spray pyrolysis technique. As shown in figure 3b, SEM characterization of the film deposited at 0.15 Pa pressure revealed petal-shaped particles containing no pores and voids [30].…”
Section: Surface Analysissupporting
confidence: 79%
“…Similarly, the grain size is also controlled by the early nucleation of the island which depends on the pressure rate. Therefore, on optimal carrier gas pressure might be useful for the formation of nuclei or the amalgamation of large number of nuclei to form large grain size [22].…”
Section: Structural Studiesmentioning
confidence: 99%
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“…Yue and co-workers applied a metal catalyst to grow SnS nanowires via vapor-liquid-solid (VLS) approach, which were grown in a chemical vapor deposition setup [6]. Chemical spray pyrolysis technique has been used to deposit SnS thin film on a substrate [7]. In addition, electrodeposition method has been applied to deposit SnS thin film on ITO substrate [8].…”
Section: Introductionmentioning
confidence: 99%
“…Also, it has high chemical and environmental stability and involves earth abundant elements. Many deposition methods have been reported for the growth of SnS films in the literature [8][9][10][11][12][13][14][15]. However, the development of high quality SnS films by CBD is one of the difficult tasks in the fabrication of SnS based photovoltaic devices and optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%