Role of rapid thermal annealing in the formation of crystalline SiGe nanoparticles

Joshi, Kapil U.; Kabiraj, D.; Narsale, A.M.; Avasthi, D.K.; Gundurao, T.K.; Warang, Trupti N.; Kothari, D.C.

doi:10.1016/j.surfcoat.2009.02.046

Cited by 10 publications

(7 citation statements)

References 10 publications

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“…The process involves cosputtering of germanium, silicon, and silicon dioxide targets onto a silicon substrate and then annealing (at over 1100 °C) 27 or rapid thermal annealing (at 900 °C) in an inert atmosphere. 28,29 SiliconÀgermanium alloys have also been synthesized by thermal evaporation of powders of silicon and germanium on a glass substrate at temperatures greater than 1400 °C30,31 and by using molecular beam epitaxy, to grow siliconÀgermanium alloy nanoparticles on a silicon substrate. 32,33 In most cases, the matrix material passivates the nanoparticle surfaces well, but the range of possible surface treatments for the embedded nanoparticles and the flexibility of using embedded nanoparticles for device applications are very limited.…”

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confidence: 99%

Creating Ligand-Free Silicon Germanium Alloy Nanocrystal Inks

Erogbogbo¹,

Liu

Ramadurai³

et al. 2011

ACS Nano

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Particle size is widely used to tune the electronic, optical, and catalytic properties of semiconductor nanocrystals. This contrasts with bulk semiconductors, where properties are tuned based on composition, either through doping or through band gap engineering of alloys. Ideally, one would like to control both size and composition of semiconductor nanocrystals. Here, we demonstrate production of silicon-germanium alloy nanoparticles by laser pyrolysis of silane and germane. We have used FTIR, TEM, XRD, EDX, SEM, and TOF-SIMS to conclusively determine their structure and composition. Moreover, we show that upon extended sonication in selected solvents, these bare nanocrystals can be stably dispersed without ligands, thereby providing the possibility of using them as an ink to make patterned films, free of organic surfactants, for device fabrication. The engineering of these SiGe alloy inks is an important step toward the low-cost fabrication of group IV nanocrystal optoelectronic, thermoelectric, and photovoltaic devices.

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confidence: 99%

Creating Ligand-Free Silicon Germanium Alloy Nanocrystal Inks

Erogbogbo¹,

Liu

Ramadurai³

et al. 2011

ACS Nano

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“…The Si/Ge/Si probably consists of relaxed Ge cores surrounded by the SiGe shells whereby the Si cap layer must be alloyed with Ge to form a SiGe shells around the Ge cores. It is possible that the Si cap layer plays a role in relieving stress and acts as a capping factor protecting the Ge core from getting oxidized [12]. Figure 4 shows the measured high resolution X-ray diffraction (HRXRD) of the three samples.…”

Section: Resultsmentioning

confidence: 99%

Structural and Optical Characterizations of Ge Nanostructures Fabricated by RF Magnetron Sputtering and Rapid Thermal Processing

et al. 2012

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In this work, we use a simple and cost effective technique of sputtering followed by the rapid thermal processing at 900• C for 30 s to form Ge nanostructures on the Si(100) substrate. A layer of Ge (300 nm) and Si cap layer (100 nm) were deposited using RF magnetron sputtering. Two samples were prepared: Ge layer with Si capping (Si/Ge/Si) and Ge layer without Si capping (Ge/Si). Scanning electron microscopy shows that subsequent annealing in a rapid thermal processing gives uniformed Ge or SiGe islands with an estimated size of 100-500 nm. For the Ge/Si sample, under post growth annealing there had vanished the deposited Ge layer as confirmed by energy dispersive X-ray analysis. Atomic force microscopy shows that the surface roughness increases by a factor of 15.55% as the islands formed. The Raman spectrum shows that good crystalline structures of the Ge and SiGe peaks are produced. High resolution X-ray diffraction reveals cubic and tetragonal Ge phases with estimated average crystallite sizes of 42 nm and 20 nm, respectively. The results showed that it is possible to grow high quality Ge and SiGe nanostructures using a simple technique of sputtering for potential applications in photonics and high speed devices.

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“…2−9 A. Kling 7 deposited a multilayer structure with five periods of amorphous SiGe nanoparticles/SiO 2 layers in different thicknesses by low-pressure chemical vapor deposition and annealed to crystallize. Joshi 8 reported the formation of SiGe crystalline nanoparticles embedded in the SiO 2 film by the atom beam sputtering method in conjunction with rapid thermal annealing. Lin 9 prepared SiGe nanoparticles of different sizes by a simple thermal evaporation method.…”

Section: Introductionmentioning

confidence: 99%

“…The fabrication of SiGe nanoparticles has been the object of experimental and theoretical research studies for many years. − A. Kling deposited a multilayer structure with five periods of amorphous SiGe nanoparticles/SiO 2 layers in different thicknesses by low-pressure chemical vapor deposition and annealed to crystallize. Joshi reported the formation of SiGe crystalline nanoparticles embedded in the SiO 2 film by the atom beam sputtering method in conjunction with rapid thermal annealing. Lin prepared SiGe nanoparticles of different sizes by a simple thermal evaporation method.…”

Section: Introductionmentioning

confidence: 99%

Hidden State of Si₅₀Ge₅₀ Nanoparticles During Rapid Solidification

Zheng

Xiao

Tian

et al. 2021

Crystal Growth & Design

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The structure determines the property of materials, while observing the microstructure is a challenge in experiments. With molecular dynamics (MD) simulation, the solidification of Si50Ge50 nanoparticles is extensively investigated in terms of the potential energy, the pair distribution function, and several parameters based on the largest standard cluster analysis. It is found that Si50Ge50 nanodroplets is cooled into a crystal without element segregation through four stages, including the initial liquid, the rapid growth, the critical-nuclei crystalline (CNC) state, and the steady growth. The saturation of the covalent bond is satisfied before the directionality in the crystallization process. Interestingly, at the CNC state, the average size of the crystalline structure is independent of temperature but depends on the cooling rate; and the heritability of basic crystalline atoms is not over 50% until the end of the CNC state. These results deepen the understanding of the structural evolution during the rapid cooling of Si50Ge50 nanodroplets and provide useful guidelines for the preparation of alloy nanodevices.

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Role of rapid thermal annealing in the formation of crystalline SiGe nanoparticles

Cited by 10 publications

References 10 publications

Creating Ligand-Free Silicon Germanium Alloy Nanocrystal Inks

Creating Ligand-Free Silicon Germanium Alloy Nanocrystal Inks

Structural and Optical Characterizations of Ge Nanostructures Fabricated by RF Magnetron Sputtering and Rapid Thermal Processing

Hidden State of Si₅₀Ge₅₀ Nanoparticles During Rapid Solidification

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Role of rapid thermal annealing in the formation of crystalline SiGe nanoparticles

Cited by 10 publications

References 10 publications

Creating Ligand-Free Silicon Germanium Alloy Nanocrystal Inks

Creating Ligand-Free Silicon Germanium Alloy Nanocrystal Inks

Structural and Optical Characterizations of Ge Nanostructures Fabricated by RF Magnetron Sputtering and Rapid Thermal Processing

Hidden State of Si50Ge50 Nanoparticles During Rapid Solidification

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Hidden State of Si₅₀Ge₅₀ Nanoparticles During Rapid Solidification