Despite the importance of high thermal conductance (i.e., low thermal resistance) of metal contacts to thermal management of graphene devices, prior reported thermal conductance (G) of metal/graphene interfaces are all relatively low, only 20-40 MW m -2 K -1 . One possible route to improve the thermal conductance of metal/graphene interfaces is through additional heat conduction by electrons, since graphene can be easily doped by metals. In this paper, we evaluate the electronic heat conduction across metal/graphene interfaces by measuring the thermal conductance of Pd/transferred graphene (trG)/Pd interfaces, prepared by either thermal evaporation or radio-frequency (rf) magnetron sputtering, over a wide temperature range of 80 ≤ T ≤ 500 K. We find that for the samples prepared by thermal evaporation, the thermal conductance of Pd/trG/Pd is 42 MW m -2 K -1 . The thermal conductance only weakly depends on temperature, which suggests that heat is predominantly carried by phonons across the intrinsic Pd/graphene interface. However, for Pd/trG/Pd samples with the top Pd films deposited by rf magnetron sputtering, we observe a significant increment of thermal conductance from the intrinsic value of 42 MW m -2 K -1 to 300 MW m -2 K -1 , and G is roughly proportional to T. We attribute the enhancement of thermal conductance to an additional channel of heat transport by electrons via atomic-scale pinholes formed in the graphene during the sputtering process. We