Role of resist components in electron emission and capture

Kostko, Oleg; McAfee, Terry R.; Naulleau, Patrick P.

doi:10.1117/12.2687332

Cited by 1 publication

(2 citation statements)

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“…Figure 2b shows that the peak at binding energy 35 eV mainly comes from the PAG and peaks between 10-15 eV binding energy originate from the PAG and polymer. A similar assignment was presented by Kostko and co-authors [8] for a CAR model resist. These observations indicate a PAG (possibly polymer too) decomposition upon exposure as expected in these types of resist systems [8].…”

Section: Escap Photoelectron Spectrumsupporting

confidence: 67%

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Actinic photoemission spectroscopy of litho materials using a table-top ultrafast EUV source

Singh,

Dorney,

Holzmeier

et al. 2024

Metrology, Inspection, and Process Control XXXVIII

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Extreme ultraviolet (EUV) lithography (92 eV) has recently entered logic and memory high-volume manufacturing to ensure the continuation of Moore's Law into advanced technology nodes (sub 5 nm). In parallel to advancements in the lithographic system, the development of suitable photoresists plays an equally important role in pushing the boundaries of EUV lithography. Fundamental work on well-established chemically amplified resists (CAR) for EUV as well as the upcoming resists based on metal-organic materials have indicated that the lithographic mechanism is largely governed by electron mediated chemistry. In a simplified model, the electrons emitted upon ionization of the material generate further secondary electrons, which interact with the resist components and induce a solubility switch driven by electron and radiation chemistry. To develop a better performing resist, it is of utmost importance to understand the photoelectron kinetic energy spectrum, secondary electrons and their generation efficiency, and the electron mean free path in the photoemission process. In this work, we use photoemission spectroscopy with a table-top, coherent, 92 eV photon source to shed light on the chemistry driven by photon exposure. The valence band photoelectron spectrum (PES) of an environmentally stable chemically amplified photoresist (ESCAP), as well as a model material for an open-source metal oxide (OSMO) resist were measured using our tabletop EUV photoemission setup. We report the evolution of the PES as a function of exposure dose; capturing chemical changes.

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Section: Escap Photoelectron Spectrumsupporting

confidence: 67%

“…A similar assignment was presented by Kostko and co-authors [8] for a CAR model resist. These observations indicate a PAG (possibly polymer too) decomposition upon exposure as expected in these types of resist systems [8].…”

Section: Escap Photoelectron Spectrumsupporting

confidence: 67%