Perovskite-inspired
materials (PIMs) provide low-toxicity and air-stable
photo-absorbers for several possible optoelectronic devices. In this
context, the pnictogen-based halides Cu2AgBiI6 (CABI) are receiving increasing attention in photovoltaics. Despite
extensive studies on power conversion efficiency and shelf-life stability,
nearly no attention has been given to the physicochemical properties
of the interface between CABI and the hole transport layer (HTL),
which can strongly impact overall cell operations. Here, we address
this specific interface with three polymeric HTLs: poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine) (poly-TPD), thiophene-(poly(3-hexylthiophene))
(P3HT), and poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA).
Our findings reveal that devices fabricated with poly-TPD and P3HT
outperform the commonly used Spiro-OMeTAD in terms of device operational
stability, while PTAA exhibits worse performances. Density functional
theory calculations unveil the electronic and chemical interactions
at the CABI–HTL interfaces, providing new insights into observed
experimental behaviors. Our study highlights the importance of addressing
the buried interfaces in PIM-based devices to enhance their overall
performance and stability.