Role of Si Doping in Reducing Coercive Fields for Ferroelectric Switching in 
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Yang, Hyemi; Lee, Hyun-Jae; Jo, Jinhyeong; Kim, Chang Hoon; Lee, Jun Hee

doi:10.1103/physrevapplied.14.064012

Cited by 28 publications

(11 citation statements)

References 39 publications

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“…It is important to note that the ideal structure of Hf 0.5 Si 0.5 O 2 hafnium silicate has the tetragonal I 4 1 / amd structure, which is close to the P 4 2 / nmc tetragonal structure of the HfO 2 t-phase . In this regard and according to the literature data, , the admixture of tetravalent Si impurity stabilizes well the t-phase of HfO 2 , naturally replacing Hf in 8-fold oxygen-coordinated sites. Thus, Si Hf should promote the formation of a common Hf–Si–O matrix at the SiO 2 /HfO 2 interface and the formation of joint HfO 2 –Hf x Si 1– x O 2 crystallites.…”

Section: Discussionsupporting

confidence: 56%

“…It is important to note that the ideal structure of Hf 0.5 Si 0.5 O 2 hafnium silicate has the tetragonal I4 1 / amd structure, which is close to the P4 2 /nmc tetragonal structure of the HfO 2 t-phase. 53 In this regard and according to the literature data, 18,19 18,19 while Al impurity tends to form separated Al 2 O 3 areas in HfO 2 . 20,21,55 Presumably, this effect is caused by different preferable coordination sites of Si and Al.…”

Section: ■ Discussionmentioning

confidence: 57%

“…The current work aims to contribute to understanding the evolution of the composition and extension of the transition layer formed at the SiO 2 /FE:HfO 2 interface in model FEFET systems and its correlation with different postannealing crystallization behaviors of HfO 2 affected by the valence of impurity atom (Al or Si). The choice of Al and Si is due to the fact that these elements are characterized by different valences and different preferable coordination sites; , thus, one can expect different effects of Al and Si on the formation of tetragonal P 4 2 / nmc and orthorhombic Pca 2 1 phases of HfO 2 . − It is important that ionic radii of Al and Si are well smaller than that of Hf and the significance of using them can be stressed by the following. At the moment, a comprehensive study on the effect of the ionic radius of the impurities with the same valence on the P r value of HfO 2 is known, and according to this work, the different types of impurities with an ionic radius smaller than that of Hf does not change the P r value significantly.…”

Section: Introductionmentioning

confidence: 99%

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Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

et al. 2023

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Characterization of the composition and extension of the SiO2/HfO2 interface in the model systems Si-sub./SiO2 (7.5 nm)/FE:HfO2 (9.5 nm)/TiN (9 nm) for standard impurity concentrations and annealing temperatures (Si 3.6%, 1000 °C; Al 5.5%, 850 °C) were carried out using X-ray photoelectron spectroscopy with high kinetic energies. In addition, the crystalline properties of HfO2 were characterized by transmission electron microscopy and grazing incidence X-ray diffraction depending on the type of impurity. Formation of Hf x Si1–x O2 at the SiO2/HfO2 interface was revealed, and the dependence of its thickness d silicate and stoichiometry X on the formation of the tetragonal phase P42/nmc of HfO2 was established. It is shown that doping with aluminum followed by annealing prevents the formation of a tetragonal phase and reduces both d silicate and X by about 20% (with respect to undoped HfO2 annealed at the same temperature), in contrast to doping with Si followed by annealing, which practically does not affect d silicate and X. The results obtained are important for the problem of imbalance in the voltage drop across the gate oxides stack in a ferroelectric field-effect transistor and improvement of its endurance and retention characteristics.

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Section: Discussionsupporting

confidence: 56%

“…It is important to note that the ideal structure of Hf 0.5 Si 0.5 O 2 hafnium silicate has the tetragonal I4 1 / amd structure, which is close to the P4 2 /nmc tetragonal structure of the HfO 2 t-phase. 53 In this regard and according to the literature data, 18,19 18,19 while Al impurity tends to form separated Al 2 O 3 areas in HfO 2 . 20,21,55 Presumably, this effect is caused by different preferable coordination sites of Si and Al.…”

Section: ■ Discussionmentioning

confidence: 57%

Section: Introductionmentioning

confidence: 99%

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Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

et al. 2023

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“…In other words, the orthorhombic phase, which is formed from the tetragonal phase by the field-induced phase transition, has a lower E c than the orthorhombic phase formed upon cooling. The calculations show that the orthorhombic phase passes through the tetragonal phase during polarization reversal. , This suggests that the activation energy of the phase transition between the tetragonal and orthorhombic phases affects the E c . Where the field-induced phase transition to the tetragonal phase occurs, the free energy difference between the tetragonal and orthorhombic phases is small, suggesting a decrease in the activation energy.…”

Section: Resultsmentioning

confidence: 96%

“…30,31 This suggests that the activation energy of the phase transition between the tetragonal and orthorhombic phases affects the E c . 32 Where the field-induced phase transition to the tetragonal phase occurs, the free energy difference between the tetragonal and orthorhombic phases is small, suggesting a decrease in the activation energy. Therefore, it is reasonable that the field-induced orthorhombic phase has a lower E c .…”

Section: Resultsmentioning

confidence: 99%

Systematic Investigation of Ferroelectric Properties in x%YO_1.5–(100–x%)Hf_1–yZr_yO₂ Films

Mimura

Tashiro

Shiraishi

et al. 2023

ACS Appl. Electron. Mater.

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The effect of composition on the ferroelectric properties was investigated using epitaxial x%YO 1.5 −(100−x%)Hf 1−y Zr y O 2 films. The tetragonal phase, with a composition near the phase boundaries with the orthorhombic or monoclinic phase, exhibits ferroelectricity through the field-induced phase transition from the tetragonal to the orthorhombic phase. Remarkably, the orthorhombic phase generated via the fieldinduced phase transition has a lower coercive field (E c ). The E c could be controlled from 1400 (5%YO 1.5 −95%(Hf 0.50 Zr 0.50 )O 2 ) to 2400 kV/cm (5%YO 1.5 − 95%(Hf 0.75 Zr 0.25 )O 2 ) with the same remnant polarization (P r ) value of ∼17 μC/cm 2 . These results are important for ferroelectric device applications with low-voltage drives.

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Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Wang,

Chen,

Yun

et al. 2025

Adv Funct Materials

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Ferroelectrics are considered to be promising candidates for highly energy‐efficient electronic devices in future information technologies owing to their nonvolatile and low‐energy operation of spontaneous electric polarization. Driven by the pervasive and growing demands for miniaturization and energy efficiency in nanoelectronics, further reductions in the operating voltage of ferroelectric‐based devices are dispensable and thus have received immense attentions. Recent remarkable advances in atomic‐scale synthesis, cutting‐edge characterizations, and multiscale theoretical calculations of ferroelectrics have gained unprecedented insights into the manipulation of emergent functionalities in multiple length scales, which helps the discovery of nontrivial polar structures and designs of device architectures toward the promise of ultralow‐power consumption. Here, state‐of‐the‐art strategies for reducing operating voltage in ferroelectric materials and devices are reviewed. This article starts with a brief introduction and major achievements in ferroelectrics, and expounds on the techniques to probe the polarization‐switching process. Moreover, this article focuses predominantly on recent advancements in achieving low operating voltages through various prevalent strategies such as thickness scaling, defect engineering, chemical doping, surface and interfacial design, strain engineering. Finally, perspectives with scientific and technical challenges are discussed, aiming to facilitate the energy‐efficient applications of ferroelectric materials and devices in future information technologies.

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Role of Si Doping in Reducing Coercive Fields for Ferroelectric Switching in HfO2

Cited by 28 publications

References 39 publications

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

Systematic Investigation of Ferroelectric Properties in x%YO_1.5–(100–x%)Hf_1–yZr_yO₂ Films

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

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Role of Si Doping in Reducing Coercive Fields for Ferroelectric Switching in HfO2

Cited by 28 publications

References 39 publications

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of HfxSi1–xO2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of HfxSi1–xO2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor

Systematic Investigation of Ferroelectric Properties in x%YO1.5–(100–x%)Hf1–yZryO2 Films

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Contact Info

Product

Resources

About

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of Hf_xSi_1–xO₂ at the SiO₂/FE:HfO₂ Interface in a Ferroelectric Field-Effect Transistor

Systematic Investigation of Ferroelectric Properties in x%YO_1.5–(100–x%)Hf_1–yZr_yO₂ Films