Heat is an inexhaustible
source of energy, and it can
be exploited
by thermoelectronics to produce electrical power or electrical responses.
The search for a low-cost thermoelectric material that could achieve
high efficiencies and can also be straightforwardly scalable has turned
significant attention to the halide perovskite family. Here, we report
the thermal voltage response of bismuth-based perovskite derivates
and suggest a path to increase the electrical conductivity by applying
chalcogenide doping. The films were produced by drop-casting or spin
coating, and sulfur was introduced in the precursor solution using
bismuth triethylxanthate. The physical–chemical analysis confirms
the substitution. The sulfur introduction caused resistivity reduction
by 2 orders of magnitude, and the thermal voltage exceeded 40 mV K–1 near 300 K in doped and undoped bismuth-based perovskite
derivates. X-ray diffraction, Raman spectroscopy, and grazing-incidence
wide-angle X-ray scattering were employed to confirm the structure.
X-ray photoelectron spectroscopy, elemental analysis, scanning electron
microscopy, and energy-dispersive X-ray spectroscopy were employed
to study the composition and morphology of the produced thin films.
UV–visible absorbance, photoluminescence, inverse photoemission,
and ultraviolet photoelectron spectroscopies have been used to investigate
the energy band gap.