Role of Ti Electrode on the Electrical Characterization of Filament within Al<sub>2</sub>O<sub>3</sub>Based Antifuse

Tian, Min; Xu, Jigeng; Zhong, Huicai; Li, Li; Luo, Jun; Wang, Zhigang

doi:10.1149/2.0051804jss

Cited by 5 publications

(2 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1a-v) to generate additional oxygen vacancies. Many recent studies highlighted the ability of Ti to extract oxygen from adjacent Al 2 O 3 , 38 ZrO 2 , 39 and doped HfO 2 thin films. 40 The HfO 2 matrix surrounding the Ti nanoislands effectively serves as an oxygen reservoir.…”

Section: Observing Vacancy Filament Behavior Via Efm and C-afmmentioning

confidence: 99%

Highly Uniform Resistive Switching in HfO₂ Films Embedded with Ordered Metal Nanoisland Arrays

Wang

Huyan

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

Memristors enter a critical developmental stage where emerging large scale integration methods face major challenges with severe switching instabilities in the oxide layer. Here we achieve superior uniformity within HfO 2 films by embedding highly-ordered metal nanoisland (NI) arrays. Embedded films exhibit significant reduction in both SET and RESET while displaying enhanced uniformity of This article is protected by copyright. All rights reserved. 2 operating voltages and resistance states. This behavior is attributed to the concentration of electric fields along Pt and Ti NIs and their interactions with the surrounding oxide film matrix environment, which induce separate and distinct filamentary formation mechanisms that affect the stability. We report on a method to further optimize the uniformity of the SET voltage by translating the nanoisland array position down the film-thickness dimension towards the bottom electrode. A comparison of the density and distribution of the oxygen vacancies responsible for the formation/dissolution of conducting filaments is made via combined electrostatic force microscopy (EFM) and conductive atomic force microscopy (c-AFM) studies. Finally, complete observation of the morphological evolution of conducting filaments produced by Pt and Ti is enabled by three-dimensional (3-D) c-AFM nanotomography and cross-sectional scanning transmission electron microscopy -energy dispersive spectroscopy (STEM-EDS) to provide direct correlations of nanoisland-oxide interactions with overall switching performance.

show abstract

Section: Observing Vacancy Filament Behavior Via Efm and C-afmmentioning

confidence: 99%

Highly Uniform Resistive Switching in HfO₂ Films Embedded with Ordered Metal Nanoisland Arrays

Wang

Huyan

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4] We have fabricated a new antifuse based on high-κ material Al 2 O 3 deposited by atomic layer deposition, 5 explored the unique programming characteristics, 6 and investigated the properties of conductive filament within Al 2 O 3 dielectric after antifuse was broken down. 7 The bottom and top metal that close to the antifuse layer is extremely important to influence the characteristics of the device. The structure of Metal-insulator-Metal antifuse is similar to resistive-switching random access memory (RRAM), once RRAM has been breakdown, it can be reset to high resistance if a reverse voltage is applied and reset current is equal or larger than the programming current.…”

mentioning

confidence: 99%

Effects of Electrode on the Performance of Al₂O₃Based Metal-Insulator-Metal Antifuse

Tian

Zhong

2019

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

In this paper, two metal-insulator-metal (MIM) antifuse structures were fabricated with amorphous Al2O3 deposited by atomic layer deposition (ALD) as the dielectric, and with Ti and TiN as top electrode, separately. The Ti electrode anitfuse device shows lower breakdown voltage, while the device with TiN electrode exhibits lower leakage current and longer time dependent dielectric breakdown (TDDB) in the off-state. Moreover, the on-state resistance of device with TiN electrode is slightly lower than that of Ti electrode. We also found that the device with TiN cannot be reset to higher resistance after dielectric breakdown which presents a strong filament, but the device with Ti electrode can be reset to a higher resistance if the reset current is larger than 20 mA. All the performance differences between the two devices are mainly attributed to the stronger ability of oxygen affinity of metal Ti than that of TiN.

show abstract

Polarity dependence degradation mechanism of Al2O3 based metal-insulator-metal antifuse

Tian

Zhong

Li³

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

In this paper, we investigated the degradation mechanism of an atomic layer deposition Al2O3 based metal-insulator-metal antifuse device under both positive and negative voltage polarities. It was found that the leakage current of the antifuse device was larger under negative voltage polarity compared to positive voltage polarity, while the lifetime was longer for negative stress than that of positive stress. We found that the degradation mechanism under positive voltage stress was strongly influenced by the good oxygen affinity of top electrode metal Ti, and the current that flowed through the dielectric was not a main source in the degradation process. The electron trapping characteristics of the device were also investigated, and it may contribute to obtain a long lifetime.

show abstract

Role of Ti Electrode on the Electrical Characterization of Filament within Al₂O₃Based Antifuse

Cited by 5 publications

References 26 publications

Highly Uniform Resistive Switching in HfO₂ Films Embedded with Ordered Metal Nanoisland Arrays

Highly Uniform Resistive Switching in HfO₂ Films Embedded with Ordered Metal Nanoisland Arrays

Effects of Electrode on the Performance of Al₂O₃Based Metal-Insulator-Metal Antifuse

Polarity dependence degradation mechanism of Al2O3 based metal-insulator-metal antifuse

Contact Info

Product

Resources

About

Role of Ti Electrode on the Electrical Characterization of Filament within Al2O3Based Antifuse

Cited by 5 publications

References 26 publications

Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays

Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays

Effects of Electrode on the Performance of Al2O3Based Metal-Insulator-Metal Antifuse

Polarity dependence degradation mechanism of Al2O3 based metal-insulator-metal antifuse

Contact Info

Product

Resources

About

Role of Ti Electrode on the Electrical Characterization of Filament within Al₂O₃Based Antifuse

Highly Uniform Resistive Switching in HfO₂ Films Embedded with Ordered Metal Nanoisland Arrays

Highly Uniform Resistive Switching in HfO₂ Films Embedded with Ordered Metal Nanoisland Arrays

Effects of Electrode on the Performance of Al₂O₃Based Metal-Insulator-Metal Antifuse