Role of various dielectric environment matrices of InP/ZnS core/shell quantum dot on optical gain coefficient

Elamathi, M.; Peter, A. John; Lee, Chang Woo

doi:10.1140/epjd/e2020-10095-6

Cited by 20 publications

(3 citation statements)

References 31 publications

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“…These results are predictable because, the fact of encapsulating a quantum dot (QD) by a surrounding matrix changes the electrical properties. The reason of this behavior is deeply discussed in [46], where the authors have investigated the effects of the erosion zone of the targets on film growth and on the structural and electrical properties of polycrystalline Al-doped ZnO (AZO). Beyond Real ε (ω, I), representing the absorption factor follows a similar behavior regarding the capping matrix.…”

Section: Resultsmentioning

confidence: 99%

External electric field effect and impact of encapsulating matrix on optical and electronic properties within CdSe/ZnSe core/shell QDs

Jbeli¹,

Yahyaoui²,

Zeiri³

et al. 2021

Phys. Scr.

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In this study, we have carried out a theoretical investigation of CdSe/ZnSe core/shell spherical quantum dot (CSQD) embedded in different dielectric matrix. The effect of surrounding matrix and the external electric field on the linear and third-order nonlinear real and imaginary parts of the dielectric function have been simulated numerically using the effective mass approximation and taking into account the compact density matrix approach. The electronic band structure and corresponding wave functions were calculated by solving the Schrödinger equation in the framework evoked previously. The study revealed a significant blue shift of the transition energies under electric field offering the possibility of adjusting them. In addition, by varying the dielectric matrices enveloping our main structure, it was also found that the choice of the pattern of the matrix is fundamental for the manipulation of the resonance peak energies of the dielectric function. RECEIVED

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Section: Resultsmentioning

confidence: 99%

External electric field effect and impact of encapsulating matrix on optical and electronic properties within CdSe/ZnSe core/shell QDs

Jbeli¹,

Yahyaoui²,

Zeiri³

et al. 2021

Phys. Scr.

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“…As the hetero-nanostructures, quantum states in zinc-blende InGaN quantum wells and the exciton integrated absorption, including wurtzite InGaN-QWs, have also been studied [21,22]. CdSe QDs exhibit carrier confinement in electron-to-electron transitions and in the self-consistent field (SCF) with intraband regime [23][24][25][26]. The study concerning hydrogenic impurity states in spherical CdSe/ZnS/CdSe QDs has been reported by Stojanovic and Kostic [27].…”

Section: Introductionmentioning

confidence: 99%

Infrared relative dielectric permittivity and refractive index on the spherical CdSe/ZnS heteronanocrystals with self-consistent field

Ortakaya,

Duque

2024

Phys. Scr.

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We deal with allowed-subband quantum states of two-electron in a semiconductor spherical core/shell quantum dot. Within framework of the infrared transitions, solving the Schrödinger-Poisson equation for many body interactions on the conduction-subbands, we obtain energy shifts in the absorption peaks of dielectric function and refractive index. The energy eigenvalues of the CdSe/ZnS nanocrystal have been computed as a function of the layer thicknesses via self-consistent field. The transitions related to $D^{-}$ and $D^0$ states, have been plotted considering linear dielectric permittivity. Refractive index and absorption coefficient under 3.0 nm radius have been also presented as a function of infrared photon energies.

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“…Nowadays, the most common application of optical technology in ber-optic telecommunication networks is for high-speed connections such as server racks, terminal connections, WANs [1] Photonic crystals are effective structures for making new arti cial materials with controlled light characteristics for special functions [2]. It is necessary to mention that, before the development of photonic crystals, the control of light in dielectric environments was impossible, and the only way to use the properties of light was in a re ected state against different materials [3,4]. Studies of photonic crystal based logic gates are divided into broad categories of photonic crystal interference based logic gates, photonic crystal resonator based logic gates and photonic crystal self-collimating logic gates Salmanpour et al (2014) [5].…”

Section: Introductionmentioning

confidence: 99%

An Optical Logic Gate Based On 2-Dimensional Photonic Crystals with High Operating Contrast Ratio And Fast Response Time

Derdour

Mouetsi

2023

Preprint

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An optimized all-optical "NAND" logic gate is studied analytically. The particular characteristic of this logic gate is that it is based on photonic crystals, it consists of a resonator coupled with two waveguides on a silicon substrate. The operating wavelength is equal to 1.55µm which represents the telecommunication wavelength, the switching power of the optical logic gate studied is 1.693 kw /µm2 its response is independent of the response of the resonator when the power intensity of the optical waves is lower than the resonance wavelength, the light will be coupled in the waveguides, in the opposite case the light propagates in the waveguide of the bus.

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Role of various dielectric environment matrices of InP/ZnS core/shell quantum dot on optical gain coefficient

Cited by 20 publications

References 31 publications

External electric field effect and impact of encapsulating matrix on optical and electronic properties within CdSe/ZnSe core/shell QDs

External electric field effect and impact of encapsulating matrix on optical and electronic properties within CdSe/ZnSe core/shell QDs

Infrared relative dielectric permittivity and refractive index on the spherical CdSe/ZnS heteronanocrystals with self-consistent field

An Optical Logic Gate Based On 2-Dimensional Photonic Crystals with High Operating Contrast Ratio And Fast Response Time

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