The supported Ni/In 2 O 3 catalysts are of great interest in CO 2 hydrogenation, but the formation of the In 0 or Ni− In alloy phases due to over-reduction would lead to rapid catalyst deactivation. Herein, thin Al 2 O 3 films were deposited on the Ni/ In 2 O 3 surface by atomic layer deposition (ALD) as an antireduction agent, which enables the In 2 O 3 catalyst to maintain a significant abundance of active In 3+ species even during hightemperature H 2 treatment (400 °C, 2 h), thereby effectively resisting the deactivation caused by over-reduction of In 2 O 3 . Various characterization methods confirm the antiover-reduction effect of ALD-Al 2 O 3 films, namely, inhibiting the formation of In 0 and In 3 Ni 2 alloys during high-temperature H 2 treatment and facilitating the reoxidation of low-valence In to form the active In 2 O 3−x phase in the presence of a CO 2 atmosphere. As treated with H 2 at 400 °C, the 5Al 2 O 3 /Ni/In 2 O 3 -R400 catalyst exhibited an STY MeOH of 7.39 g MeOH h −1 g Ni −1 and a methanol selectivity of 64% (reaction conditions: 3 MPa, 300 °C, and 12,000 mL g cat −1 h −1 ). Particularly, the STY MeOH increased by 11.5 times as compared with that of the Ni/In 2 O 3 -R400 catalyst without coating the ALD-Al 2 O 3 layer (0.59 g MeOH h −1 g Ni −1 ). Density functional theory (DFT) calculations validate the effectiveness of specific charge transfer tendencies in suppressing the over-reduction of high-valence In species. Through the analysis of the crystal orbital Hamilton population (COHP) and projected density of states (PDOS) electronic structures of the adsorbate species, the Al 2 O 3 /Ni/In 2 O 3 catalyst is shown to significantly enhance CO 2 activation and further catalytic reactions. Accordingly, this study unveils the deactivation mechanism of In 2 O 3 -based catalysts due to over-reduction and provides a method to regulate their reduction level by depositing ALD-Al 2 O 3 films on the In 2 O 3 -based catalysts.