Roles of nitrogen incorporation in HfAlOx(N) gate dielectrics for suppression of boron penetration

Nabatame, Toshihide; Iwamoto, Kunihiko; Yamamoto, Katsuhiko; Tominaga, Koji; Hisamatsu, H.; Ohno, Morifumi; Akiyama, Koji; Ikeda, Minoru; Nishimura, Tomoaki; Ota, Hiroyuki; Horikawa, Tsuyoshi; Toriumi, Akira

doi:10.1116/1.1768526

Cited by 10 publications

(6 citation statements)

References 7 publications

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“…An interesting point in this experiment is that the 650 °C annealing in NH 3 causes a small amount of crystallization, while the above 850 °C annealing maintains the amorphous structure. Namely, the lower temperature annealing introduces the less nitrogen, while higher temperature results in more nitrogen which brings about the higher resistance against the crystallization and the boron penetration [4].…”

Section: High-k Film Growth Technologymentioning

confidence: 99%

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Toriumi

Iwamoto

Ota

et al. 2005

Microelectronic Engineering

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Section: High-k Film Growth Technologymentioning

confidence: 99%

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Toriumi

Iwamoto

Ota

et al. 2005

Microelectronic Engineering

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“…Kang et al [42] claimed that nitrogen incorporation at the gate dielectric/Si interface region and SiN formation may lead to the suppression of SiO formation in the reaction R3 mentioned above, resulting in the suppression of the leakage current increase. The suppression of diffusion of oxygen [42,43] as well as impurities such as boron [48,53,54] through the film has also been reported to be a beneficial influence of the nitrogen incorporation.…”

Section: Hafnium-nitrogen-based Gate Dielectricsmentioning

confidence: 94%

Hafnium-Based Gate Dielectric Materials

Nishiyama

2013

High Permittivity Gate Dielectric Materials

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In this chapter, we focus on hafnium-based gate dielectrics. HfO 2 is regarded as the most promising material for the high-k gate dielectrics owing to its large dielectric constant and large band-gap energy. In the first part of this chapter, these characteristics are addressed in a comparison with SiO 2 and other high-k materials. Thermal stability is a major issue for the application of high-k materials to MOSFETs in LSIs. Although HfO 2 satisfies this requirement, severer process conditions may cause problems even with this material. Suppression of these issues is also addressed in the second part of this chapter. In order to enhance the characteristics of HfO 2 , transformation of the monoclinic phase to the tetragonal and the cubic phases with larger dielectric constant has been pursued recently. We mention the issue in the last part of this chapter. Introductory Remarks and Brief Outline of the ChapterSince the proposal of the materials in the early 2000s [1-3], hafnium-based gate dielectrics have been regarded as the most promising materials for the application to large scale integrations (LSIs). In 2007, Intel announced the start of manufacturing of 45 nm-node LSIs with high-k/metal gate stack, with the remark that the world's first high-k material in commercial production was hafnium-based [4].There are several characteristics that the high-k materials should meet for the application to metal oxide semiconductor field effect transistors (MOSFETs) in LSIs. First, we clarify the properties so that readers can understand their A. Nishiyama

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“…Since their silicon or aluminum binary oxides ͑such as HfSiO x and HfAlO x ͒ retain an amorphous structure after hightemperature heat treatment, these binary oxides are now the most promising candidates to become the gate dielectric for next generation MOSFETs. 1, [3][4][5][6][7][8] Although the permittivity and the diffusion properties of impurities, such as boron penetration from a polycrystalline Si gate, are thought to be related to the microscopic structures of high-k materials, 6,[9][10][11] information about the atomic configuration is rather limited. Positron annihilation is an established technique for investigating defects and open spaces ͑or open volume͒ in solids.…”

Section: Introductionmentioning

confidence: 99%

Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams

Uedono

Ikeuchi

Yamabe

et al. 2005

Journal of Applied Physics

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Thin Hf0.6Si0.4Ox and Hf0.3Al0.7Ox films fabricated by metal-organic chemical-vapor deposition and atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positions indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. For HfSiOx, the mean size of the open volumes and their size distribution decreased with increasing postdeposition annealing (PDA) temperature. For HfAlOx, although the overall behavior of the open volumes in response to annealing was similar to that for HfSiOx, PDA caused a separation of the mean size of the open volumes. When this separation occurred, the value of the line-shape parameter S increased, suggesting an oxygen deficiency in the amorphous matrix. This fragmentation of the amorphous matrix can be suppressed by decreasing the annealing time.

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Roles of nitrogen incorporation in HfAlOx(N) gate dielectrics for suppression of boron penetration

Cited by 10 publications

References 7 publications

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Hafnium-Based Gate Dielectric Materials

Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams

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