2006
DOI: 10.1016/j.susc.2006.04.013
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Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

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Cited by 3 publications
(1 citation statement)
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“…After 1400 cycles, a blunt peak at about 23° appears. In combination with the XPS, TEM, and SEM test results, this peak is related to the (110) lattice plane of SiF 4 , because the Si–O skeletons have been basically destroyed by this point . No other peaks are observed throughout the cycle, indicating that the active material remains amorphous during all processes.…”
Section: Methodsmentioning
confidence: 99%
“…After 1400 cycles, a blunt peak at about 23° appears. In combination with the XPS, TEM, and SEM test results, this peak is related to the (110) lattice plane of SiF 4 , because the Si–O skeletons have been basically destroyed by this point . No other peaks are observed throughout the cycle, indicating that the active material remains amorphous during all processes.…”
Section: Methodsmentioning
confidence: 99%